“…Such configuration leads to a low exposure of the active edge sites. [18][19][20] Furthermore, in such lay-down configuration of MoS 2 flakes, the photoexcited electrons in the semiconductor have to hop through each layer to reach the active edge sites in the MoS 2 flakes, resulting in a much higher electron resistance (≈2200 times higher than the electron moving in the same layer). [21,22] According to the fact that edges of MoS 2 is more conductive than its basal plane, [13,21,23,24] making MoS 2 standing on the semiconductor surface, e.g., connecting the edges of few-layered MoS 2 flakes with the semiconductor, serves as a promising heterostructures for improving the efficiency of the hydrogen evolution, owing to a better electronic contact and an optimized electron transport pathway.…”