2003
DOI: 10.1016/s0039-6028(03)00957-9
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Electronic structure and reactivity of defect MoS2

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Cited by 54 publications
(29 citation statements)
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“…These authors also examined adsorption of hydrogen on the MoS 2 edges and relative stabilities of various edge structures as a function of H 2 S/H 2 and the systemÕs thermodynamic potentials. We have previously reported some common features regarding the hydrogen-free MoS 2 edge electronic structure, in particular the metallic character of extended edge surface states [29] that agree well with the earlier results of Byskov et al [22].…”
Section: Introductionsupporting
confidence: 90%
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“…These authors also examined adsorption of hydrogen on the MoS 2 edges and relative stabilities of various edge structures as a function of H 2 S/H 2 and the systemÕs thermodynamic potentials. We have previously reported some common features regarding the hydrogen-free MoS 2 edge electronic structure, in particular the metallic character of extended edge surface states [29] that agree well with the earlier results of Byskov et al [22].…”
Section: Introductionsupporting
confidence: 90%
“…The computational tools employed in this study have been described in detail previously [29]. Briefly, all calculations use density functional theory (DFT) [37,38].…”
Section: Methodsmentioning
confidence: 99%
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“…Such configuration leads to a low exposure of the active edge sites. [18][19][20] Furthermore, in such lay-down configuration of MoS 2 flakes, the photoexcited electrons in the semiconductor have to hop through each layer to reach the active edge sites in the MoS 2 flakes, resulting in a much higher electron resistance (≈2200 times higher than the electron moving in the same layer). [21,22] According to the fact that edges of MoS 2 is more conductive than its basal plane, [13,21,23,24] making MoS 2 standing on the semiconductor surface, e.g., connecting the edges of few-layered MoS 2 flakes with the semiconductor, serves as a promising heterostructures for improving the efficiency of the hydrogen evolution, owing to a better electronic contact and an optimized electron transport pathway.…”
Section: Doi: 101002/aenm201600464mentioning
confidence: 99%