2016
DOI: 10.1021/acs.nanolett.6b02101
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Electronic Structure and Luminescence of Quasi-Freestanding MoS2 Nanopatches on Au(111)

Abstract: Monolayers of transition metal dichalcogenides are interesting materials for optoelectronic devices due to their direct electronic band gaps in the visible spectral range. Here, we grow single layers of MoS2 on Au(111) and find that nanometer-sized patches exhibit an electronic structure similar to their freestanding analogue. We ascribe the electronic decoupling from the Au substrate to the incorporation of vacancy islands underneath the intact MoS2 layer. Excitation of the patches by electrons from the tip o… Show more

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Cited by 69 publications
(71 citation statements)
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References 29 publications
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“…The renormalization of the bandgap in 2D materials due to the substrate is an intriguing concept that receives a lot of attentions recently1017343839. It has been shown that single-layer MoS 2 grown on Au(111) has a significantly lower bandgap than that grown on graphite103839.…”
Section: Resultsmentioning
confidence: 99%
See 1 more Smart Citation
“…The renormalization of the bandgap in 2D materials due to the substrate is an intriguing concept that receives a lot of attentions recently1017343839. It has been shown that single-layer MoS 2 grown on Au(111) has a significantly lower bandgap than that grown on graphite103839.…”
Section: Resultsmentioning
confidence: 99%
“…It has been shown that single-layer MoS 2 grown on Au(111) has a significantly lower bandgap than that grown on graphite103839. In the case of MoSe 2 , earlier study suggested that MoSe 2 on graphite has a smaller gap than MoSe 2 on bilayer graphene17.…”
Section: Resultsmentioning
confidence: 99%
“…The electroluminescence has been observed in two-dimensional monolayer field-effect transistors or p-n light-emitting diodes made of MoS 2 [9,10], WSe 2 [11], and WS 2 [12]. Single layer molybdenum disulfide (MoS 2 ) field-effect transistors can emit electroluminescence (visible light) at 1.8 eV thanks to its direct band gap [9].…”
Section: Light-emitting Diodesmentioning
confidence: 99%
“…Single layer molybdenum disulfide (MoS 2 ) field-effect transistors can emit electroluminescence (visible light) at 1.8 eV thanks to its direct band gap [9]. Electrostatic gating must be used to improve control and efficiency of light emission.…”
Section: Light-emitting Diodesmentioning
confidence: 99%
“…We show that the spatial intensity variations can be simulated by including vibration-assisted tunneling in addition to the Franck-Condon picture.Scanning tunneling microscopy (STM) experiments were performed at a temperature of 4.6 K in ultra-high vacuum. Monolayer-islands of MoS 2 were grown on a clean Au(111) surface by depositing Mo in an H 2 S atmosphere (5 · 10 −5 mbar) and annealing to 800 K [30,31].2,5-Bis(3-dodecylthiophen-2-yl)thieno[3,2b]thiophene (BTTT) [phthalocyanine (H 2 Pc)] molecules were evaporated at 365 K [680 K] onto the surface held at 200 K [120 K]. Differential-conductance (dI/dV ) spectra and maps were recorded using lock-in detection with 921 Hz modulation frequency.Deposition of BTTT molecules on MoS 2 leads to partially ordered structures with the molecules lying parallel to each other (Figure 1a) [33].…”
mentioning
confidence: 99%