1996
DOI: 10.1103/physrevb.54.14413
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Electronic structure and elastic properties of theNi3X(X=Mn, Al, Ga, Si, Ge) intermetallics

Abstract: First-principles total-energy electronic structure calculations based on the full-potential linear-muffin-tinorbital method have been used to study the electronic and mechanical properties of the L1 2-type ordered nickel-based intermetallics Ni 3 X ͑XϭMn, Al, Ga, Si, Ge͒. The calculated values for the equilibrium volume and elastic properties are generally in good agreement with experiments. The large shear anisotropy factor across the series is attributed to the anisotropy of the bonding charge density, which… Show more

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Cited by 71 publications
(58 citation statements)
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References 32 publications
(26 reference statements)
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“…A strain tensor is applied on the computational cell as 40 : ε 33 = ε 12 = ε 13 = ε 23 = 0, while ε 11 and ε 22 are independently changed from -0.02 to 0.02. Since we chose orthogonal supercells, we simply change the lengths of a N 1 × N 2 supercell along the [100] and [010] directions as a 1 = a 0 ε 11 , and a 2 = a 0 ε 22 , where a 0 = 3.165Å is the strain-free single lattice constant, and a 1 , a 2 are the corresponding strained lattice constant.…”
Section: Model and Methodologymentioning
confidence: 99%
“…A strain tensor is applied on the computational cell as 40 : ε 33 = ε 12 = ε 13 = ε 23 = 0, while ε 11 and ε 22 are independently changed from -0.02 to 0.02. Since we chose orthogonal supercells, we simply change the lengths of a N 1 × N 2 supercell along the [100] and [010] directions as a 1 = a 0 ε 11 , and a 2 = a 0 ε 22 , where a 0 = 3.165Å is the strain-free single lattice constant, and a 1 , a 2 are the corresponding strained lattice constant.…”
Section: Model and Methodologymentioning
confidence: 99%
“…The yellow cell represents a unit of the L1 2 configuration in the plane, and the A and B sites correspond to the face-centered and corner sites in the unit, respectively. For simplicity, Al, V, and Si are located at the B sites 9,10) in the diagram, while the vacancies are preferentially located at the A sites, 11) and antisite defects are ignored. The directional migration of Al (thick blue arrow) and V (thick green arrow) is considered for the occurrence of the phase separation within the distribution of their compositions.…”
Section: Discussionmentioning
confidence: 99%
“…Ni charge transfer and the Ni d-Si p hybridization effect. 9,10) It is considered that the occurrence of Ni-Si bonding with its strong covalent character substantially reduces the site exchange probability of these Ni and Si atoms in the L1 2 matrix. Thus, our interest in this study was focused on the influence of Si in the microstructure evolution related to the L1 2 !L1 2 +D0 22 phase separation of Ni 3 Al 1Àx V x alloys.…”
Section: Introductionmentioning
confidence: 99%
“…Intermetallic compounds Ni 3 Al, Ni 3 Ga, and Ni 3 Mn provide a class of systems exhibiting many interesting mechanical and electronic properties that make them attractive for structural applications at elevated temperatures [2].…”
Section: Introductionmentioning
confidence: 99%
“…First-principles total--energy electronic structure calculations based on the full-potential linear mun-tin-orbital method have been used to study the electronic and elastic properties of the Ni 3 X (X = Al, Ga, Mn) [2]. The electronic structures, mechanical and magnetic properties of Ni 3 Ga, Ni 3 Al, and * corresponding author; e-mail: boucetta_said02@yahoo.fr Ni 3 In have been studied by spin-density functional theory and also by X-ray absorption near-edge spectra [3,4].…”
Section: Introductionmentioning
confidence: 99%