2004
DOI: 10.1063/1.1812594
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Electronic structure and bonding properties of Si-doped hydrogenated amorphous carbon films

Abstract: The effect of nitrogen incorporation on the bonding structure of hydrogenated carbon nitride films Electron cyclotron resonance deposition, structure, and properties of oxygen incorporated hydrogenated diamondlike amorphous carbon films

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Cited by 27 publications
(22 citation statements)
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“…When V b is increased to 600 V, these bands shift to higher energies of 285.3 and 293.0 eV, respectively, and may be due to the formation of more DLC films. The π * feature is typical of the C=C bond (sp 2 ) whereas the σ * feature is typical of the tetrahedral C-C bond (sp 3 ) [7,10,11]. A very weak C-H feature is also observed in all films at ∼287 eV [7,10,11], as shown in the inset of figure 1, which suggests that the content of C-H bonds is relatively low compared to those of sp 2 and sp 3 bonds.…”
Section: Measurementsmentioning
confidence: 90%
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“…When V b is increased to 600 V, these bands shift to higher energies of 285.3 and 293.0 eV, respectively, and may be due to the formation of more DLC films. The π * feature is typical of the C=C bond (sp 2 ) whereas the σ * feature is typical of the tetrahedral C-C bond (sp 3 ) [7,10,11]. A very weak C-H feature is also observed in all films at ∼287 eV [7,10,11], as shown in the inset of figure 1, which suggests that the content of C-H bonds is relatively low compared to those of sp 2 and sp 3 bonds.…”
Section: Measurementsmentioning
confidence: 90%
“…The π * feature is typical of the C=C bond (sp 2 ) whereas the σ * feature is typical of the tetrahedral C-C bond (sp 3 ) [7,10,11]. A very weak C-H feature is also observed in all films at ∼287 eV [7,10,11], as shown in the inset of figure 1, which suggests that the content of C-H bonds is relatively low compared to those of sp 2 and sp 3 bonds. The content of sp 2 -bonded carbon atoms of each sample was estimated from the integrated area between a Gaussian fit of the spectrum and the baseline in the 282.2-286.2 eV range.…”
Section: Measurementsmentioning
confidence: 90%
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“…Si can incorporate into the network of a-C:H materials where it promotes the formation of sp 3 carbon clusters (e.g., Yoshikawa et al 2004;Ray et al 2004). Conversely, amorphous silicates can be doped with hydrocarbons to yield Si(CH 3 ) 1,2 structures (Grishko & Duley 2002a).…”
Section: Si-dopingmentioning
confidence: 99%