Electronic states of the heteroepitaxial double-layer system: Graphite/monolayer hexagonal boron nitride/Ni(111)

Nagashima, A.; Gamou, Y.; Terai, M.; Wakabayashi, Makoto; Oshima, C.

doi:10.1103/physrevb.54.13491

Cited by 36 publications

(20 citation statements)

References 18 publications

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“…However, the feasibility of ARPES experiments on a single-atom thick h-BN on Ni͑111͒ has been successfully demonstrated. 13 We show that the intercalation technique, previously developed for the graphene/Ni interface, is applicable to ML h-BN as well and allows to liberate it from the tight chemical interaction with Ni, which is important for the graphene/ML-h-BN synthesis.…”

Section: Introductionmentioning

confidence: 89%

Quasifreestanding single-layer hexagonal boron nitride as a substrate for graphene synthesis

et al. 2010

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We demonstrate that freeing a single-atom thick layer of hexagonal boron nitride ͑h-BN͒ from tight chemical bonding to a Ni͑111͒ thin film grown on a W͑110͒ substrate can be achieved by intercalation of Au atoms into the interface. This process has been systematically investigated using angle-resolved photoemission spectroscopy, x-ray photoemission, and absorption techniques. It has been demonstrated that the transition of the h-BN layer from the "rigid" into the "quasifreestanding" state is accompanied by a change in its lattice constant. Using chemical vapor deposition, graphene has been successfully synthesized on the insulating, quasifreestanding h-BN monolayer. We anticipate that the in situ synthesized weakly interacting graphene/h-BN double layered system could be further developed for technological applications and may provide perspectives for further inquiry into the unusual electronic properties of graphene.

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Section: Introductionmentioning

confidence: 89%

Quasifreestanding single-layer hexagonal boron nitride as a substrate for graphene synthesis

et al. 2010

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“…Similarly to AB, BZ is mainly used to produce thin films. In the nineties, Nagashima et al published a series of reports on the epitaxial growth of [72][73][74][75]. In their work, the authors showed that the reaction rate drops by more than two orders of magnitude after completion of the first BN layer which means that this strategy is an excellent way to produce well-defined surfaces.…”

Section: Nanostructured and Architectured Bn One-step Synthesis Of Bnmentioning

confidence: 96%

Nanostructured and architectured boron nitride from boron, nitrogen and hydrogen-containing molecular and polymeric precursors

Bernard

Miele

2014

Materials Today

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The controlled synthesis of boron nitride at the nanoscale with predefined and uniform nanostructures and architectures is in general a big challenge, and making full use of these materials in applications still requires great effort. In this article, recent progress on the synthesis of nanostructured and architectured boron nitride involving molecular and polymeric precursors which contain only boron, nitrogen and hydrogen are reviewed. The potential applications of these materials with controlled porosity and/or dimensions controlled at the nanoscale as zero, one, two and three dimensional materials are discussed. Finally, future prospects for boron nitride in terms of synthesis and applications are considered.

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“…8 However, no reports have been published concerning either epitaxial films or single crystals of the new ternary compounds; only complex mixtures of graphite and h-BN have so far been prepared. In previous papers, [9][10][11][12][13] we have clarified peculiar properties of monolayer h-BN on Ni(111). The π-d orbital hybridization at the interface modifies the bands of the h-BN layer, resulting in a metallic character, the commensurate structure by shrinking the unit cell, low work function, and the softening TO ⊥ phonons.…”

Section: Introductionmentioning

confidence: 99%

Heteroepitaxial Film of Monolayer Graphene/Monolayer h-BN onNi(111)

et al. 2003

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Heteroepitaxial multilayers, consisting of graphene/hexagonal boron nitride (h-BN) films on Ni(111), have been investigated by means of vibrational spectroscopy, low energy electron diffraction and Auger electron spectroscopy. Vibrational spectra of the heteroepitaxial film show the appearance of transverse optical (TO ⊥ ) modes with out-of-plane polarization at 100 meV of the monolayer h-BN, in contrast to the softening phonon at 90 meV on the pristine system of monolayer h-BN on Ni(111). The findings strongly suggest that the interfacial bonds between h-BN and Ni(111) weaken due to the formation of monolayer graphene.

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Electronic states of the heteroepitaxial double-layer system: Graphite/monolayer hexagonal boron nitride/Ni(111)

Cited by 36 publications

References 18 publications

Quasifreestanding single-layer hexagonal boron nitride as a substrate for graphene synthesis

Quasifreestanding single-layer hexagonal boron nitride as a substrate for graphene synthesis

Nanostructured and architectured boron nitride from boron, nitrogen and hydrogen-containing molecular and polymeric precursors

Heteroepitaxial Film of Monolayer Graphene/Monolayer h-BN onNi(111)

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