Electronic states in tin oxide thin films upon photo and electrochemical analysis

Ammari, Abdelkader; Trari, M.

doi:10.1016/j.colsurfa.2018.10.070

Cited by 8 publications

(5 citation statements)

References 39 publications

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“…In connection with the UV–vis absorption discussion, the secondary linearity portions were likely caused by shallow Ti 3+ defects near the conduction band. 40 , 47 − 50 The sub-band originated from shallow Ti 3+ states and was estimated to be centered at −0.03 V vs RHE, slightly above the reduction potential of water. In combination with the UV–vis analysis, the positions of both CB minimum and VB maximum are therefore located approximately at −0.33 V vs RHE and 1.84 V vs RHE, respectively.…”

Section: Resultsmentioning

confidence: 99%

Structural Properties of NdTiO_2+xN_1–x and Its Application as Photoanode

Chen

Jaworski

et al. 2020

Inorg. Chem.

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Mixed-anion inorganic compounds offer diverse functionalities as a function of the different physicochemical characteristics of the secondary anion. The quaternary metal oxynitrides, which originate from substituting oxygen anions (O 2– ) in a parent oxide by nitrogen (N 3– ), are encouraging candidates for photoelectrochemical (PEC) water splitting because of their suitable and adjustable narrow band gap and relative negative conduction band (CB) edge. Given the known photochemical activity of LaTiO 2 N, we investigated the paramagnetic counterpart NdTiO 2+ x N 1– x . The electronic structure was explored both experimentally and theoretically at the density functional theory (DFT) level. A band gap ( E g ) of 2.17 eV was determined by means of ultraviolet–visible (UV–vis) spectroscopy, and a relative negative flat band potential of −0.33 V vs reversible hydrogen electrode (RHE) was proposed via Mott–Schottky measurements. 14 N solid state nuclear magnetic resonance (NMR) signals from NdTiO 2+ x N 1– x could not be detected, which indicates that NdTiO 2+ x N 1– x is berthollide, in contrast to other structurally related metal oxynitrides. Although the bare particle-based photoanode did not exhibit a noticeable photocurrent, Nb 2 O 5 and CoO x overlayers were deposited to extract holes and activate NdTiO 2+ x N 1– x . Multiple electrochemical methods were employed to understand the key features required for this metal oxynitride to fabricate photoanodes.

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Section: Resultsmentioning

confidence: 99%

Structural Properties of NdTiO_2+xN_1–x and Its Application as Photoanode

Chen

Jaworski

et al. 2020

Inorg. Chem.

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“…This blue shift of ~230 meV of the band edges can be understood if we consider the quantum confinement pooled alongside with the Moss-Burstein effect. Therefore, an additional energy is required for the electronic transition due to the band filling of the band edges in addition to the shift due to the particle size [24].…”

Section: Optical Propertiesmentioning

confidence: 99%

Study of the Structural, Optical, Electrical and Morphological Properties of Nickel Sulfide Thin Films Used in Supercapacitors

Gahtar

Benramache

Ammari

et al. 2021

Annals of West University of Timisoara - Physics

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Nickel sulfide (NiS) thin film has been deposited on glass substrates by spray-pyrolysis at 325 ± 5 °C. The precursor aqueous solution was synthetized using hexahydrated nickel nitrates and thiourea. The structural, morphological, optical and electrical properties were characterized using X-ray diffraction (XRD), scanning electron microscopy (SEM), UV-visible spectroscopy and four probes electrical measurements. The XRD analysis confirmed the hexagonal structure of NiS thin film, which was found to crystalize along [010] direction with an average crystallites size of 10.5 nm. The lattice parameters are a = b = 3.420 Å and c = 5.300 Å in the space group P63/mmc. The optical properties of the films were investigated through the transmittance and the reflectance measurements. The results revealed that the material exhibits a direct optical band gap of 1.03 eV. The elementary composition analysis confirmed the presence of Ni and S with a stoichiometry ratio (Ni/S) of 1.05. The morphology analysis revealed a homogenous crack-free, compact appearance and a granular surface in all scanned areas. The average roughness of the surface was 6.48 nm. On the other hand, the film exhibits a high electrical conductivity ca. 1.10 × 105 S/cm at room temperature. The above results show that the prepared NiS in this study has a good crystallization, dense morphology, good stoichiometric ratio and high conductivity; therefore, it stands as a potential candidate for application in supercapacitors as an electrode material.

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“…The dislocation density (δhkl), which measures the amount of defects in a crystal is defined as the length of dislocation lines per unit of volume. It was determined using the following formula [25]:…”

Section: X-ray Diffraction Analysismentioning

confidence: 99%

“…The electrical conductivity of cobalt sulfide thin films was determined by four-points probe method, it is based on the measured sheet resistance of the films as expressed by the following formula [25]:…”

Section: Electrical Analysismentioning

confidence: 99%

Substrate Temperature Effect on the Structural, Optical and Morphological Proprties of Cobalt Sulfide Thin Films Deposited Using Spray Pyrolisis

Gahtar,

Zaouche,

Maouane

et al. 2024

Annals of West University of Timisoara - Physics

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Thin films of cobalt sulfide were grown on glass substrates at four different temperatures (250 °C, 300 °C, 350 °C and 400 °C) using spray-pyrolysis technique. The precursor solutions were prepared using cobalt chloride and thiourea. The effect of deposition temperature on the structural, morphological, and optical properties of cobalt sulfide thin films was investigated using different experimental techniques such as X-ray diffraction (XRD), and UV-visible spectrophotometry, Fourier Transform Infrared Spectroscopy (FT-IR) and four-probe method. The XRD analysis showed that crystallite size varies from 9.76 to 14.11 nm with increasing the deposition temperature. UV-visible data analysis shows a decrease in the band gap energies with increasing temperature (1.82 eV for 250 °C, 1.76 eV for 300 °C, 1.72 eV for 350 °C, and 1.65 eV for 400 °C). The analysis of the chemical composition by FTIR confirmed the presence of Co, S elements. On the other hand, the electrical conductivity of the cobalt sulfide thin films increased owing to the increase in the crystallite size and reduction of defects density.

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Electronic states in tin oxide thin films upon photo and electrochemical analysis

Cited by 8 publications

References 39 publications

Structural Properties of NdTiO_2+xN_1–x and Its Application as Photoanode

Structural Properties of NdTiO_2+xN_1–x and Its Application as Photoanode

Study of the Structural, Optical, Electrical and Morphological Properties of Nickel Sulfide Thin Films Used in Supercapacitors

Substrate Temperature Effect on the Structural, Optical and Morphological Proprties of Cobalt Sulfide Thin Films Deposited Using Spray Pyrolisis

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Electronic states in tin oxide thin films upon photo and electrochemical analysis

Cited by 8 publications

References 39 publications

Structural Properties of NdTiO2+xN1–x and Its Application as Photoanode

Structural Properties of NdTiO2+xN1–x and Its Application as Photoanode

Study of the Structural, Optical, Electrical and Morphological Properties of Nickel Sulfide Thin Films Used in Supercapacitors

Substrate Temperature Effect on the Structural, Optical and Morphological Proprties of Cobalt Sulfide Thin Films Deposited Using Spray Pyrolisis

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Structural Properties of NdTiO_2+xN_1–x and Its Application as Photoanode

Structural Properties of NdTiO_2+xN_1–x and Its Application as Photoanode