Abstract:The calculation of the electronic energy levels of n-type δ-doped quantum wells in a GaAs matrix is presented. The effects of hydrostatic pressure on the band structure are taken into account specially when the host material becomes an indirect gap one. The results suggest that under the applied pressure regime the GaAs can support two-dimensional conduction channels associated to the delta-doping, with carrier densities exceeding 10 13 cm −2
“…In this situation, the conduction band minimum is found at the X-point of the Brillouin zone. As it has been previously shown, for that pressure range the comparison between the DDQW energy level spectra calculated at the Γ-point and at the X-point yields that, for all the values of the impurity densities, the ground state of the n-type δ-doped QW is located precisely at the X-point [6]. If one assumes that the two-dimensional electron gas forms at that specific Brillouin zone position, it immediately follows that the electron system undergoes a transition to a heavier carrier situation.…”
Section: = ¥supporting
confidence: 59%
“…This mechanism could also serve to achieve a high density of charge carriers [6]. The systems to consider are diverse: single and double δ-doped quantum wells, electronic devices with δ-doped channels, and so on.…”
A new generation of high frequency 3D deflection technique opens up manifold possibilities for a wider application of electron beam (EB) technologies for surface treatment. A high flexibility of process parameters connected with high productivity is obtained from the simultaneous interaction of the EB in several processing areas or by carrying out several processes simultaneously. The change of material and component‐specific surface properties can be adapted as required. An outstanding improvement of properties can be reached. Typical technological characteristics are explained and the influence of EB parameters on microstructure and properties is discussed. It has been shown that the EB is becoming more and more attractive and important for industrial applications of thermal surface technologies such as hardening, combined thermochemical treatment/hardening, remelting, surface alloying and dispersing
“…In this situation, the conduction band minimum is found at the X-point of the Brillouin zone. As it has been previously shown, for that pressure range the comparison between the DDQW energy level spectra calculated at the Γ-point and at the X-point yields that, for all the values of the impurity densities, the ground state of the n-type δ-doped QW is located precisely at the X-point [6]. If one assumes that the two-dimensional electron gas forms at that specific Brillouin zone position, it immediately follows that the electron system undergoes a transition to a heavier carrier situation.…”
Section: = ¥supporting
confidence: 59%
“…This mechanism could also serve to achieve a high density of charge carriers [6]. The systems to consider are diverse: single and double δ-doped quantum wells, electronic devices with δ-doped channels, and so on.…”
A new generation of high frequency 3D deflection technique opens up manifold possibilities for a wider application of electron beam (EB) technologies for surface treatment. A high flexibility of process parameters connected with high productivity is obtained from the simultaneous interaction of the EB in several processing areas or by carrying out several processes simultaneously. The change of material and component‐specific surface properties can be adapted as required. An outstanding improvement of properties can be reached. Typical technological characteristics are explained and the influence of EB parameters on microstructure and properties is discussed. It has been shown that the EB is becoming more and more attractive and important for industrial applications of thermal surface technologies such as hardening, combined thermochemical treatment/hardening, remelting, surface alloying and dispersing
“…In this context there exist some previous works. For instance, some years ago the energy level structure of a single ‐doped quantum well was reported as a function of the hydrostatic pressure considering the –X crossover that occurs in GaAs when pressure goes beyond 13 kbar (). There are also studies of the effect of hydrostatic pressure on the excitonic spectrum of single ‐doped systems () and in the optical and transport properties for ‐doped structures .…”
In the framework of the effective mass approximation and using a Thomas–Fermi‐like model for the conduction band potential energy profile, the effects of hydrostatic pressure on the linear and nonlinear intersubband optical response of an asymmetric double δ‐doped quantum well are studied. In particular, the intersubband coefficients of light absorption and the relative refractive index change in the system were calculated. It is found that the pressure causes a redshift of the signal response as well as a reduction in the coefficients's amplitudes. We have also found that the asymmetry of the potential profile clearly affects the relative refractive index change because, as long as the system becomes more asymmetric, this physical property becomes diminished.
“…There are some studies of this effect in single and multiple wells of different profiles (mainly square) as well as quantum dots and quantum wires [3,4,5]. Additionally, there are some works in isolated n-type δ -doped wells in which the effect of hydrostatic pressure is studied as well [6]. These studies conclude that by the effect of pressure is possible to modify the electronic structure of δ -doped quantum wells.…”
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