Electronic states and phonon properties of GexSi1−x nanostructures

Zhao, Peng; Liu, L.Z.; Yang, Yi; Wu, Xiaohong

doi:10.1016/j.aop.2014.12.024

Cited by 2 publications

(1 citation statement)

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“…The excitonic emission with type II heterostructure at low temperature was shown in Ge/Si self-assembled nanostructures prepared by molecular beam epitaxy [23,24]. Photoluminescence (PL) spectra arising from excitonic emission around the indirect band gap of Si 1−x Ge x nanocrystals at room temperature were reported to depend on their compositions [16] but were rather broad due to the inhomogeneous distribution of the size, which hampered detailed studies of the involved electronic transitions [25][26][27].…”

Section: Introductionmentioning

confidence: 99%

Single phase Si_1−xGex nanocrystals and the shifting of the E1 direct energy transition

Giang

Thuy

et al. 2015

Nanotechnology

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We report preparation and characterization of Si1-xGex alloys with varied composition x of a large range from 0-1. The materials have been obtained by co-sputtering, followed by a heat treatment process at 600, 800, and 1000 °C for 30 min in a nitrogen gas atmosphere. X-ray diffraction data have revealed the formation of single-phase nanoparticles in the face-centered cubic (FCC) structure of Si1-xGex alloys. We found that lattice constant a of the Si1-xGex alloys increased linearly with the composition parameter x. Average diameters of the single-phase nanoparticles were estimated to be between 3-10 nm. Further evidence of FCC single-phase [Formula: see text] nanoparticles has been obtained by high resolution transmission electron microscopy. From absorption spectra, the gradual shift of the direct phononless transition identified for the E1 point in the Brillouin zone of bulk Ge is observed in single-phase Si1-xGex nanoparticles as a function of the composition parameter x.

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