Electronic Spectroscopy and Photophysics of Si Nanocrystals: Relationship to Bulk c-Si and Porous Si

Brus, L. E.; Szajowski, Paul F.; Wilson, William L.; Harris, T. D.; Schuppler, S.; Citrin, P. H.

doi:10.1021/ja00115a025

Cited by 322 publications

(212 citation statements)

References 0 publications

Supporting

Mentioning

191

Contrasting

Order By: Relevance

“…14 Silicon (Si) is one of the most important semiconductors for microelectronic and energy applications, and Si quantum dots (QDs) have also attracted many attentions. [15][16][17][18][19][20][21][22][23] Experimentally, free-standing Si QDs have been synthesized in either liquid phase or gas phase. [24][25][26][27][28] Gas-phase doping of P and B in these free-standing Si QDs with at least partial hydrogen coverage of their surface has also been achieved by introducing dopant precursors (diborane and phosphine) into the plasma.…”

Section: Introductionmentioning

confidence: 99%

Chemical trend of the formation energies of the group-III and group-V dopants in Si quantum dots

Wei

2013

Phys. Rev. B

View full text Add to dashboard Cite

Doping behavior in quantum dots (QDs) differs from that in the bulk. Despite many efforts, the doping properties are still not fully understood. Using first-principles methods, we have calculated the formation energies of various group-III acceptors and group-V donors doping at all non-equivalent sites in a Si QD (Si147H100). To analyze the trend of the formation energy, we decompose it into two terms: the unrelaxed formation energy (chemical energy) and the relaxation energy. We find that the unrelaxed formation energy generally increases as the dopant moves from the center of the QD to the surface. The variation of the unrelaxed formation energy in the surface region is explained by the variation of the local potential of the QD and the size effect. The relaxation energy gain increases as the size mismatch between the dopant and Si atom increases. Generally, the relaxation effect becomes more significant as the dopant moves toward the surface of the QD. The trend of the formation energy is determined by the two terms discussed above. If the size mismatch between the dopant and Si atom is small, the trend of the formation energy generally follows that of the unrelaxed formation energy, increasing as the dopant moves from the center to the surface; thus, these dopants have a better chance of staying in the core region. On the other hand, if the size mismatch is large, the relaxation effect dominates and the formation energy decreases, which indicates these dopants cannot enter the core region under equilibrium growth conditions.

show abstract

Section: Introductionmentioning

confidence: 99%

Chemical trend of the formation energies of the group-III and group-V dopants in Si quantum dots

Wei

2013

Phys. Rev. B

View full text Add to dashboard Cite

show abstract

“…No luminescence exhibiting obvious quantum confinement has been reported until recently. This is in contrast to porous Si [21,31] and Si nanocrystals [32][33][34][35] from which quantum confinement can be more easily observed. As a binary compound, silicon carbide has complex surface states and structures [36][37][38][39].…”

Section: Silicon Carbide Nanostructures Versusmentioning

confidence: 76%

Diverse Role of Silicon Carbide in the Domain of Nanomaterials

Sahu

Ghosh

Pradhan

et al. 2012

International Journal of Electrochemistry

View full text Add to dashboard Cite

Silicon carbide (SiC) is a promising material due to its unique property to adopt different crystalline polytypes which monitor the band gap and the electronic and optical properties. Despite being an indirect band gap semiconductor, SiC is used in several highperformance electronic and optical devices. SiC has been long recognized as one of the best biocompatible materials, especially in cardiovascular and blood-contacting implants and biomedical devices. In this paper, diverse role of SiC in its nanostructured form has been discussed. It is felt that further experimental and theoretical work would help to better understanding of the various properties of these nanostructures in order to realize their full potentials.

show abstract

“…The origin of the luminescence in Si NCs is debatable, and many different mechanisms have been invoked to explain the visible PL from porous Si and Si NCs [105][106][107]. Most of the PL can be explained by quantum-confinement mechanism [28], Si/SiO 2 multilayer quantum wells [96].…”

Section: Xeol Of Si Nanocrystalsmentioning

confidence: 99%

Optical Properties of Nanostructured Silicon

Chao

2011

Comprehensive Nanoscience and Technology

View full text Add to dashboard Cite

Electronic Spectroscopy and Photophysics of Si Nanocrystals: Relationship to Bulk c-Si and Porous Si

Cited by 322 publications

References 0 publications

Chemical trend of the formation energies of the group-III and group-V dopants in Si quantum dots

Chemical trend of the formation energies of the group-III and group-V dopants in Si quantum dots

Diverse Role of Silicon Carbide in the Domain of Nanomaterials

Optical Properties of Nanostructured Silicon

Contact Info

Product

Resources

About