Electronic shell structure and carrier dynamics of high aspect ratio<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:mi>InP</mml:mi></mml:mrow></mml:math>single quantum dots

Beirne, G. J.; Reischle, M.; Roßbach, R.; Schulz, Wolfgang-Michael; Jetter, Michael; Seebeck, J.; Gärtner, P.; Gies, Christopher; Jahnke, F.; Michler, Peter

doi:10.1103/physrevb.75.195302

Cited by 32 publications

(20 citation statements)

References 21 publications

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“…The emission lines 1 and 2 may probably originate from a negatively charged and a neutral excitonic complex as the energy difference between the lines is only about 2 meV. In the InP/(Al)GaInP QD material system the exciton/biexciton binding energy is typically around 4-6 meV [7].…”

Section: Resultsmentioning

confidence: 99%

“…Next to these quantum applications, QDs as the active region in laser devices have several advantages, such as low threshold current density, high efficiency, narrow chirp characteristics, and temperature-insensitive operation [6]. We concentrated our efforts on the growth of electrically driven InP-QDs embedded in AlGaInP barrier material that is lattice-matched to GaAs to achieve QD luminescence in the red spectral region [7].…”

Section: Introductionmentioning

confidence: 99%

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Red to orange electroluminescence from InP/AlGaInP quantum dots at room temperature

Roßbach

Schulz

Eichfelder

et al. 2008

Journal of Crystal Growth

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Red to orange electroluminescence from InP/AlGaInP quantum dots at room temperature

Roßbach

Schulz

Eichfelder

et al. 2008

Journal of Crystal Growth

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“…This results in a higher band gap energy compared to the growth on exact orientated substrates [10]. The growth of InP-QDs in GaInP on such substrates produces QD densities of around 10 10 cm À2 which is orders of magnitude too high to study a single QD on an unstructured sample even when using micro-photoluminescence (m-PL) techniques [7]. To achieve a low density of optically active InP-QDs we used InAs islands embedded in GaAs as a seed layer.…”

Section: Introductionmentioning

confidence: 97%

“…As current single-photon detectors have their highest photon detection efficiency in the red spectral range it is also preferable to fabricate single QDs emitting at such wavelengths [6]. For that reason, we concentrated on the growth of InP-QDs embedded in GaInP barrier material that is latticematched to GaAs [7]. This material system can emit over a wide spectral range in the visible zone [8].…”

Section: Introductionmentioning

confidence: 99%

Growth of red InP/GaInP quantum dots on a low density InAs/GaAs island seed layer by MOVPE

Roßbach

Schulz

Reischle

et al. 2008

Journal of Crystal Growth

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“…[7][8][9] InP QDs have received special attention for their potential use as SPEs in the visible range. [10][11][12][13][14][15][16] Photon correlation measurements for both continuous 9,11 and pulsed excitation 11,13,15 as well as under electrical injection 14 show clear antibunching dips in the second-order photon correlation function g ͑2͒ ͑ ͒ at zero delay ͑ =0͒. The standard form of the correlation function is…”

mentioning

confidence: 99%

Thermal effects in InP/(Ga,In)P quantum-dot single-photon emitters

et al. 2009

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We present second-order photon correlation measurements on single InP/͑Ga,In͒P quantum dots as a function of temperature. Low background emission allows to obtain antibunching minima g ͑2͒ ͑0͒ below 0.25 up to 45 K. The antibunching time R increases or decreases with temperature depending on the quantum-dot size. The two trends result from a competition between hole thermal excitation and dark-to-bright exciton transitions. The former prevails in smaller dots showing increasing R with temperature, while the latter dominates in larger quantum dots showing decreasing R with temperature. DOI: 10.1103/PhysRevB.80.161305 PACS number͑s͒: 78.67.Hc, 78.55.Cr, 42.50.Ar Semiconductor quantum dots ͑QDs͒ are among the most promising single-photon emitters ͑SPEs͒ for quantum information applications due to their versatility, scalability, and ease to handle as compared to atom or ion-based SPEs. [1][2][3][4] However, the use of semiconductor QDs as true "on demand" SPEs is conditioned by the presence of "background photons" ͑photons emitted outside the QD but at the QD energy͒ and decoherence. 5 One important source of decoherence in QDs is the random transition between bright exciton ͑BX͒ and dark exciton ͑DX͒ states ͑exciton states with total angular momentum 1 and 2, respectively͒. 6 Exciton energy splittings, as the dark-bright exciton splitting E DB and the fine-structure splitting ⌬ FS , which are large in QDs as compared to higher dimensional systems due to the increased electron-hole Coulomb interaction, are strongly sensitive to the QD size and shape. 7-9 InP QDs have received special attention for their potential use as SPEs in the visible range. [10][11][12][13][14][15][16] Photon correlation measurements for both continuous 9,11 and pulsed excitation 11,13,15 as well as under electrical injection 14 show clear antibunching dips in the second-order photon correlation function g ͑2͒ ͑ ͒ at zero delay ͑ =0͒. The standard form of the correlation function iswhere R is the characteristic ͑minimum͒ time needed for the emission of a second photon after the first one has been emitted by the QD and ␤ is generally determined by background photons. A value ␤ = 1 indicates perfect SPE. The low values of g ͑2͒ ͑0͒ found in InP QDs ͑between 0.1 and 0.2͒ ͑Refs. 10-15͒ is indicative of efficient single-photon emission. High-temperature operation of a SPE is beneficial for practical uses. Antibunching dips up to 200 K have been reported for GaN ͑Ref. 17͒ and CdSe ͑Ref. 18͒ QDs and up to 90 K in InGaAs/AlGaAs QDs. 19 In InP QDs an upper limit of 80 K has been reached using Al containing barriers. 13 Upon raising temperature the g ͑2͒ ͑0͒ value progressively increases due to the increasing background luminescence. Temperature also influences the antibunching width. Indeed R depends on several factors, as the pumping rate, the exciton lifetime 20 and the carrier relaxation time, some of them being temperature dependent. An increase in R with temperature has been reported in InGaAs/AlGaAs QDs. 19 In this Rapid Communication we pres...

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Electronic shell structure and carrier dynamics of high aspect ratioInPsingle quantum dots

Cited by 32 publications

References 21 publications

Red to orange electroluminescence from InP/AlGaInP quantum dots at room temperature

Red to orange electroluminescence from InP/AlGaInP quantum dots at room temperature

Growth of red InP/GaInP quantum dots on a low density InAs/GaAs island seed layer by MOVPE

Thermal effects in InP/(Ga,In)P quantum-dot single-photon emitters

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