2024
DOI: 10.1016/j.cej.2023.148242
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Electronic regulation of MoS2 edge sites by d electron transfer of Ni or Co to improve the activity of CO sulfur-resistant methanation

Qiang Wang,
Weiwei Huang,
Xin Li
et al.
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“…But there are also certain differences. The light absorption ability of V S -MoS 2 -3 has been improved in the 450–550 nm range, and the overall absorption intensity is also stronger than MoS 2 , indicating that the construction of S vacancies enhances the visible light absorption performance of MoS 2 to a certain extent . The transient photocurrent tests of MoS 2 and V S -MoS 2 -3 showed that the latter exhibited a much stronger photocurrent intensity than the former (Figure b).…”
Section: Resultsmentioning
confidence: 96%
“…But there are also certain differences. The light absorption ability of V S -MoS 2 -3 has been improved in the 450–550 nm range, and the overall absorption intensity is also stronger than MoS 2 , indicating that the construction of S vacancies enhances the visible light absorption performance of MoS 2 to a certain extent . The transient photocurrent tests of MoS 2 and V S -MoS 2 -3 showed that the latter exhibited a much stronger photocurrent intensity than the former (Figure b).…”
Section: Resultsmentioning
confidence: 96%