Electronic Raman scattering in thin bismuth films

Abstract

The theory of the electron Raman scattering (ERS) in a size-quantized film within the framework of the Abrikosov-Cohen model for the energy spectrum of Bi is developed. The wavefunctions and spectrum of electrons in the film are obtained. lt is shown that the zero boundary conditions must be imposed on the total wavefunction instead of on the envelope. The boundary conditions for the envelope have a complicated form and are similar to those found by Volkov and Pinsker. It is shown that unlike the standard model of the energy spectrum of carriers the scheme of an intraband ERS process with an intermediate state in thevalence band is realizedwithin the frameworkofthe Abrikosov-Cohenspectrum. On the basisofthescheme described, the frequencydependenceofthe ERsdifferentialcross section is calculated. The cross section has a non-zero value for any An (An is the change in the electron quantum number due to the ERS process) at arbitrary orientation of the polarization vectors of incident and scattered radiation with respect to the film surface.

Electron Raman scattering in semiconductor quantum wire in an external magnetic field

“…In this paper we consider that the conduction band is partially occupied; for this reason we have a confined electron in a QWW and therefore intersubband transitions can take place. This new situation was not considered for a QWW, although in [20,21] similar systems were studied. When a carrier is present in the conduction band, the selection rules are the same for the transition associated with the emitted and incident radiation, which is different from the Raman scattering process mentioned above.…”