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1969
DOI: 10.1103/physrev.185.1022
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Electronic Properties of VO2near the Semiconductor-Metal Transition

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Cited by 538 publications
(421 citation statements)
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“…For pure VO 2 , their experimental magnetic susceptibility is the same as that of Ref. [1], and the Curie-Weiss law does not seem to apply to it.…”
supporting
confidence: 53%
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“…For pure VO 2 , their experimental magnetic susceptibility is the same as that of Ref. [1], and the Curie-Weiss law does not seem to apply to it.…”
supporting
confidence: 53%
“…The likeliest interpretation of our results, in light of previous works [1,14,15], is that the observed paramagnetism of R-VO 2 arises from temperature-disordered local moments. However, an alternative interpretation is that R-VO 2 is a spin-compensated but strongly-correlated paramagnetic metal, in which the magnetic states found in DFT simply mimic the energetic effects of strong correlation [36].…”
Section: A Error Cancellation Of Semilocal Functionals In a Stronglymentioning
confidence: 58%
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“…If one photocarrier is generated per photon, such carriers would need a mobility of 0.1 cm 2 /(V s) to account for the resistance change. This is within the known range of electron mobility in the insulating phase for VO 2 of (0.1 to 1) cm 2 /(V s) [35]. This indicates that an increase in carrier concentration is the cause for the change in conductance.…”
Section: Discussionsupporting
confidence: 57%
“…8). For monolayer MoS 2 this transition is predicted to occur at B10% bi-axial strain 19 49) have also shown a drop in resistivity before an electronic or structural phase transition in the material. These results have indicated that applying extremely high pressures onto such materials can even lead to a superconducting state.…”
Section: Discussionmentioning
confidence: 99%