Electronic properties of the interface

Weitering, Hanno H.; Carpinelli, Joseph M.

doi:10.1016/s0039-6028(97)00227-6

Cited by 27 publications

(23 citation statements)

References 48 publications

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“…STM images show that the unit cell is composed of two 2. Experimental triangular subunits with widely varying images depending on the tip bias [4,8,9,14]. While…”

Section: Introductionmentioning

confidence: 99%

Solution of Ge(111)-(4×4)-Ag structure using direct methods applied to X-ray diffraction data

et al. 1998

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A structure model for the Ge(111)-(4×4)-Ag surface is proposed. The model was derived by applying direct methods to surface X-ray diffraction data. It is a missing top layer reconstruction with six Ag atoms placed on Ge substitutional sites in one triangular subunit of the surface unit cell. A ring-like assembly containing nine Ge atoms is found in the other triangular subunit. The stability of the ring assembly may be due to Ge-Ge double bond formation. Trimers of Ge atoms, similar to the trimers found on the Ge(111)-(ǰ3×ǰ3)R30°-Ag surface, are placed in the corners of the unit cell.

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“…STM images show that the unit cell is composed of two 2. Experimental triangular subunits with widely varying images depending on the tip bias [4,8,9,14]. While…”

Section: Introductionmentioning

confidence: 99%

Solution of Ge(111)-(4×4)-Ag structure using direct methods applied to X-ray diffraction data

et al. 1998

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“…This result is consistent with an earlier EELS observation. 2 In comparison with the ͱ3ϫͱ3 and the ͱ39 ϫͱ39 surfaces, the dramatic difference is that S 2 becomes stronger and disperses downwards at e ϭϪ39°, while the metallic band S 1 is missing. It is found that S 2 is located at Ϫ0.2 eV below E F at e ϭϪ38°and it disperses downwards to Ϫ0.55 eV at e ϭϪ34°.…”

mentioning

confidence: 96%

“…1 An electron-energy-loss spectroscopy ͑EELS͒ study of the 6ϫ6 surface showed a peculiar semiconducting behavior in contrast to the metallic character of the ͱ3ϫͱ3 surface. 2 Inspired by the STM and EELS results, we have performed a detailed study of the surface electronic structure near the Fermi level for the three different periodicities of the Ag/Ge͑111͒ system. First, it is interesting to compare the different Ag/Ge͑111͒ surfaces, which have attracted relatively little attention, to the closely related and extensively studied ͱ3ϫͱ3 and ͱ21ϫͱ21 surfaces of Ag/Si͑111͒.…”

mentioning

confidence: 99%

“…Our results strongly suggest that the ͱ3ϫͱ3 surfaces of Ag/Ge͑111͒ and Ag/Si͑111͒ have the same local atomic geometry, as evidenced by their surface electronic structures, which is also consistent with previous STM studies. [1][2][3] Figure 1͑b͒ surface. The small amount of Ag atoms needed to form the ͱ39ϫͱ39 reconstruction explains why it is really difficult to obtain a pure ͱ3ϫͱ3 surface without any ringlike diffraction around the ͱ3ϫ spots at low temperature.…”

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confidence: 99%

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Metal to semiconductor transition on Ag/Ge(111): Surface electronic structure of the3×3,
Zhang
¹
,
Balasubramanian
²
,
Uhrberg
³

2001
Phys. Rev. B

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“…Silver is one example of a metal adsorbate that forms several structures on the Si(111) and Ge(111) surfaces [53][54][55][56][57][58][59][60][61][62][63][64][65][66][67][68] which depend on the amount of the adsorbate and annealing conditions. With an amount of 1 ML, Ag/Si(111) 3 3 × and Ag/Ge(111) 3 3 × superstructures can be formed that have interesting electronic and atomic properties.…”

Section: Paper Imentioning

confidence: 99%

Experimental and Theoretical Studies of Metal Adsorbates Interacting with Elemental Semiconductor Surfaces

Sohail¹

2014

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Linköping 2014Cover shows LEED, STM and ARPES images of the Sn/Ag/Ge(111)3×3 surface.During the course of the research underlying this thesis, Hafiz Muhammad Sohail was enrolled in the graduate school Agora Materiae, a doctoral program within the field of advanced and functional materials at Linköping University, Sweden. AbstractMetal adsorbates on semiconductor surfaces have been widely studied over the last few decades. The main interest is focused on various one or two-dimensional structures that exhibit interesting electronic and atomic properties. This thesis focuses on metal adsorbates interacting with the Si(111) and Ge(111) surfaces. The main experimental techniques used in the thesis include angle resolved photoelectron spectroscopy (ARPES), core-level spectroscopy, scanning tunneling microscopy (STM), and low energy electron diffraction (LEED). The experimental studies have, in some cases, been complemented by theoretical electronic structure investigations based on density functional theory (DFT).Silver (Ag), a noble metal, gives rise to several reconstructions on the (111) surfaces of Si and Ge. The Ag/Si(111) 3 3 × surface has been extensively studied, but the Ag/Ge(111) 3 3 × surface has not been given similar attention, and there are no detailed experimental nor calculated electronic band structures available in the literature. Thus, a detailed ARPES investigation of the electronic structure of the Ag/Ge(111) 3 3 × surface, with nominally 1 monolayer (ML) of Ag, is presented in the thesis together with its atomic structure.The Ag/Si(111) 3 3 × and Ag/Ge(111) 3 3 × surfaces were also studied by first principles DFT based calculations (WIEN2k). Two atomic models have been suggested for the 3 3 × surfaces in the literature, i.e., the honeycomb-chained-trimer (HCT) and the in-equivalent trimer (IET) models. Band structure calculations were performed for both models, and comparisons between calculated and experimental surface band structures are presented for the Si and Ge cases.Adding approximately 0.2 ML of Ag to Ag/Ge(111) 3 3 × results in a 6×6 phase. The electronic structure of the surface is presented in detail. Several new bands appear in the energy region close the Fermi level, which can all be explained by umklapp scattering by reciprocal lattice vectors of the 6×6 lattice. A metal to semiconductor transition, associated with the 3 3 × to 6×6 structural change, is explained by gaps opening up where the umklapp scattered bands cross. A Sn coverage of 0.75 ML on the Ag/Ge(111) 3 3 × surface results in a very wellordered 3×3 surface alloy. This alloy shows a very rich surface band structure in which the upper band exhibits peculiar splits. Two-dimensional constant energy contour data reveal the existence of two rotated contours which is related to the presence of split bands in certain directions. STM images show a hexagonal or a honeycomb structure depending on sample to tip bias. A similar amount of Sn (0.75 ML) was also evaporated onto the Ag/Si111) 3 3 × surface, with the purpose to form a s...

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Electronic properties of the interface

Cited by 27 publications

References 48 publications

Solution of Ge(111)-(4×4)-Ag structure using direct methods applied to X-ray diffraction data

Solution of Ge(111)-(4×4)-Ag structure using direct methods applied to X-ray diffraction data

Metal to semiconductor transition on Ag/Ge(111): Surface electronic structure of the3×3,
Zhang
¹
,
Balasubramanian
²
,
Uhrberg
³

2001
Phys. Rev. B

Experimental and Theoretical Studies of Metal Adsorbates Interacting with Elemental Semiconductor Surfaces

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Electronic properties of the interface

Cited by 27 publications

References 48 publications

Solution of Ge(111)-(4×4)-Ag structure using direct methods applied to X-ray diffraction data

Solution of Ge(111)-(4×4)-Ag structure using direct methods applied to X-ray diffraction data

Metal to semiconductor transition on Ag/Ge(111): Surface electronic structure of the3×3,Zhang1, Balasubramanian2, Uhrberg3 2001Phys. Rev. B

Experimental and Theoretical Studies of Metal Adsorbates Interacting with Elemental Semiconductor Surfaces

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Metal to semiconductor transition on Ag/Ge(111): Surface electronic structure of the3×3,
Zhang
¹
,
Balasubramanian
²
,
Uhrberg
³

2001
Phys. Rev. B