Electronic properties of the InP(100) surface

Moison, J. M.; Bensoussan, M.

doi:10.1016/0039-6028(86)90837-x

Cited by 43 publications

(14 citation statements)

References 16 publications

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“…9 For P-rich (2ϫ4) a mixed In-P dimer model was proposed. 10 The ion bombardment and annealing ͑IBA͒ of InP͑001͒ has been shown [31][32][33][34] to yield an In-rich (4ϫ2)/c(8ϫ2) reconstruction. However, our cleaning procedure seems to yield a P-rich surface as we determined by AES ͓Fig.…”

Section: A the "001… Surface Of Inpmentioning

confidence: 99%

Growth and magnetic properties of Fe films on InP(001)

2002

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An investigation of the InP͑001͒ surface and the characterization of thin Fe films grown on this substrate at Ϸ150 and Ϸ300 K are presented. As substrates, highly ordered P-rich (2ϫ4) reconstructed surfaces obtained by Ar ϩ ion bombardment at Ϸ570 K were used. The growth of Fe films in the submonolayer thickness range and the magnetic properties of thin Fe films grown on P-rich (2ϫ4) InP͑001͒ are reported. We observe a uniaxial in-plane magnetic anisotropy up to an Fe thickness of Ϸ14 monolayers, which is related to the uniaxial character of the InP͑001͒ reconstruction. From the magnetization behavior we obtained the surface/ interface contribution to the uniaxial anisotropy, and deduced that very small, if any, magnetically dead layers form at the interface. Auger electron spectroscopy data reveal that about one monolayer of In segregates to the top of the growing Fe film at Ϸ300 K, but does not support a strong Fe-InP͑001͒ intermixing, in contrast to the current belief. The current-voltage characterization of patterned Fe films grown on n-InP͑001͒ shows nonrectifying contacts at room temperature.

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Section: A the "001… Surface Of Inpmentioning

confidence: 99%

Growth and magnetic properties of Fe films on InP(001)

2002

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“…Such surface appears at different steps of the semiconductor devices technology. Up to now, only a few works studied the real InP(110) and InP(100) surfaces [4][5][6].…”

Section: Introductionmentioning

confidence: 99%

Surface Potential Investigations of Indium Phosphate Real Surfaces by Means of Transverse Acoustoelectric Method

Pustelny

1995

Acta Phys. Pol. A

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A method of surface potential determination in semiconductors by means of the transverse acoustoelectric echect is described. The results of theoretical analysis of the transverse acoustoelectric voltage versus surface potential and dicherent surface electrical parameters in indium phosphate single crystals are presented. The experimental results of the surface potential investigations have been obtained after various surface treatments in IranP(110) and InP(100) crystals. A strong influence of the chemical and mechanical surface treatments upon the surface potential values has been observed from the measurements. The surface InP(110) was more sensitive to dicherent surface treatments. The changes of the surface potential values were about two times greater for InP(110) than for InP(100) samples. The surface potentials after surface treatments obtained by the acoustics method were of the range -0.08 [V] to -0.22 [V].

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“…In order to quantify the influence of the surface state density r upon the electron density n in the semiconductor, we solved the Poisson equation 15 at various surface pinning energies E c À l, where E c is the conduction band energy and l is the chemical potential at the surface. Ultra-violet photoemission spectroscopy has previously determined that E c À l ¼ 0:34 6 0:1 eV for pristine h100i InP, 16 while for h110i surfaces E c À l $ 0 eV. 16,17 Given that the surfaces of h111i and h100i oriented pores will exhibit a variety of crystal orientations, we calculated n for 0 < E c À l < 0:4 eV.…”

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confidence: 99%

“…Ultra-violet photoemission spectroscopy has previously determined that E c À l ¼ 0:34 6 0:1 eV for pristine h100i InP, 16 while for h110i surfaces E c À l $ 0 eV. 16,17 Given that the surfaces of h111i and h100i oriented pores will exhibit a variety of crystal orientations, we calculated n for 0 < E c À l < 0:4 eV. The calculated conduction band energy and electron density n are reported in Fig.…”

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confidence: 99%

Photoinduced modification of surface states in nanoporous InP

Lloyd‐Hughes

Müller

Scalari

et al. 2012

Applied Physics Letters

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Heavy noble gas (Kr, Xe) irradiated (111) InP nanoporous honeycomb membranes with enhanced ultrafast alloptical terahertz emission Porous honeycombs of n-type InP were investigated by terahertz time-domain and x-ray photoemission spectroscopies. After photoexcitation the dark conductivity was found to increase quasi-irreversibly, recovering only after several hours in air. The calculated electron density for different surface pinning energies suggests that photoexcitation may reduce the density of surface states. V C 2012 American Institute of Physics. [http://dx.

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Electronic properties of the InP(100) surface

Cited by 43 publications

References 16 publications

Growth and magnetic properties of Fe films on InP(001)

Growth and magnetic properties of Fe films on InP(001)

Surface Potential Investigations of Indium Phosphate Real Surfaces by Means of Transverse Acoustoelectric Method

Photoinduced modification of surface states in nanoporous InP

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