Electronic Properties of Solids

Dresselhaus, M. S.; Dresselhaus, G.; Cronin, Stephen B.; Filho, A. G. Souza

doi:10.1007/978-3-662-55922-2_2

Cited by 29 publications

(50 citation statements)

References 13 publications

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“…Following the RTA process, the ITO thin films achieve significantly improved performance, both structurally and optically. The effect of RTA and the various deposition conditions were analyzed using the Swanepoel [40] and Drude [41–43] methods, in order to obtain the optical constants.…”

Section: Resultsmentioning

confidence: 99%

Rapid thermal annealing for high-quality ITO thin films deposited by radio-frequency magnetron sputtering

Prepelita¹,

Stavarache²,

Crǎciun³

et al. 2019

Beilstein J. Nanotechnol.

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In this work, rapid thermal annealing (RTA) was applied to indium tin oxide (ITO) films in ambient atmosphere, resulting in significant improvements of the quality of the ITO films that are commonly used as conductive transparent electrodes for photovoltaic structures. Starting from a single sintered target (purity 99.95%), ITO thin films of predefined thickness (230 nm, 300 nm and 370 nm) were deposited at room temperature by radio-frequency magnetron sputtering (rfMS). After deposition, the films were subjected to a RTA process at 575 °C (heating rate 20 °C/s), maintained at this temperature for 10 minutes, then cooled down to room temperature at a rate of 20 °C/s. The film structure was modified by changing the deposition thickness or the RTA process. X-ray diffraction investigations revealed a cubic nanocrystalline structure for the as-deposited ITO films. After RTA, polycrystalline compounds with a textured (222) plane were observed. X-ray photon spectroscopy was used to confirm the beneficial effect of the RTA treatment on the ITO chemical composition. Using a Tauc plot, values of the optical band gap ranging from 3.17 to 3.67 eV were estimated. These values depend on the heat treatment and the thickness of the sample. Highly conductive indium tin oxide thin films (ρ = 7.4 × 10−5 Ω cm) were obtained after RTA treatment in an open atmosphere. Such films could be used to manufacture transparent contact electrodes for solar cells.

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Section: Resultsmentioning

confidence: 99%

Rapid thermal annealing for high-quality ITO thin films deposited by radio-frequency magnetron sputtering

Prepelita¹,

Stavarache²,

Crǎciun³

et al. 2019

Beilstein J. Nanotechnol.

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“…As the high values of the absorption coefficient indicates that the possibility of electron transition be large and leads to a direct transitions and the energies that calculated in these values are the energy gap directly [37]. Direct energy gap for samples can be calculated using Tauc relation [38] 𝜶 𝒉 𝒗 = 𝑩 ( 𝒉 𝒗 − 𝑬 𝒈 ) 𝟏 𝟐 ⁄ … . (𝟑) Where B is a constant depends on the nature of the material, h is Planck's constant and ν is the photon frequency.…”

Section: ( 2)mentioning

confidence: 99%

Annealing temperature effect on the Structure, Morphology and Optical properties of Copper Oxide CuO thin Films

Dahham¹

2023

Tikrit J. Pure Sci.

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Copper oxide (CuO) thin films were deposited on glass substrates by (sol-gel ) method using a spin -Coating technique and the speed of the spin coater was fixed at 3000 rpm for 30 sec and the samples were are annealed at temperatures (250,350,450 and 550) ° C for 1 hrs. The structural, Morphology, and optical properties of the film are determined by using X-ray diffraction (XRD), Atomic force microscopy (AFM) and UV-visible spectroscopy respectively. The XRD patterns showed that copper oxide (CuO) thin films prepared has polycrystalline structure and when increase the annealing temperature of the thin film over than 300° C the thin film turns from phase Cu2O to CuO phase and through examination (AFM) showed that the average grain size increases with the annealing temperature either Optical examinations showed decrease in transmission and increase in absorption coefficient with increase annealing temperature. The prepared thin films have direct energy gap and the value of the optical energy gap decreased with increasing annealing temperature from 3.99 eV to 3.94 eV

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“…For the spontaneous magnetization in magnetic materials, the contribution from the orbital degree of freedom is usually weaker than that from the spin degree of freedom. This is due to the orbital quenching by strong crystal field, that causes the orbital contribution to be typically less than 10% of the total 𝑚 = 𝜇 B (2𝑆 + 𝐿) 25 . On the contrary, for the non-equilibrium magnetization, we will show that the orbital angular momentum could contribute more significantly than the spin angular momentum, due to ironically the chirality of the same strong crystal field.…”

Section: Mechanisms and Theorymentioning

confidence: 99%

Light-induced static magnetization: Nonlinear Edelstein effect

Zhou

Wang

et al. 2021

Phys. Rev. B

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Light can interact with magnetism in materials. Motivated by the Edelstein effect, whereby a static electric field can generate magnetization in metals, in this work we theoretically and computationally demonstrate that static magnetization can also be generated through light in semiconductors. Such an effect is essentially a second-order nonlinear response and can be considered as a generalization of the Edelstein effect. This nonlinear Edelstein effect (NLEE) applies to semiconductors under both linearly and circularly polarized light, and there are no constraints from either spatial inversion or time-reversal symmetry. With ab initio calculations, we reveal several prominent features of NLEE. We find that the light-induced orbital magnetizations can be significantly greater than the spin magnetizations, in contrast to standard intrinsic magnetism where the orbital magnetic moment is strongly quenched under crystal field. We show that in multilayer (multisublattice) materials, different ferromagnetic and ferrimagnetic structures can be realized under photon pumping, depending on the interlayer (intersublattice) symmetry. It is also possible to switch the magnetic ordering in antiferromagnetic materials. The relationship between NLEE and other magneto-optic effects, including the inverse Faraday effect and inverse Cotton-Mouton effect, is also discussed.

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Electronic Properties of Solids

Cited by 29 publications

References 13 publications

Rapid thermal annealing for high-quality ITO thin films deposited by radio-frequency magnetron sputtering

Rapid thermal annealing for high-quality ITO thin films deposited by radio-frequency magnetron sputtering

Annealing temperature effect on the Structure, Morphology and Optical properties of Copper Oxide CuO thin Films

Light-induced static magnetization: Nonlinear Edelstein effect

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