Electronic properties of nano-structured bismuth-antimony materials

Tang, Shuang; Dresselhaus, M. S.

doi:10.1039/c4tc00146j

Cited by 37 publications

(30 citation statements)

References 87 publications

(153 reference statements)

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“…However, it can be noticed that those series of materials, i.e., intermetallic materials of elements like Pb, Te, Bi, and etc., are typically scarce and expensive. More importantly, they contain toxic heavy metals and are readily to cause environmental pollution [ 23 , 24 ]. It will inolve a higher risk of severe pollution to put them into widespread commercial use.…”

Section: Introductionmentioning

confidence: 99%

Doping Effect on Cu2Se Thermoelectric Performance: A Review

et al. 2020

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Cu2Se, owing to its intrinsic excellent thermoelectric (TE) performance emerging from the peculiar nature of “liquid-like” Cu+ ions, has been regarded as one of the most promising thermoelectric materials recently. However, the commercial use is still something far from reach unless effective approaches can be applied to further increase the figure of merit (ZT) of Cu2Se, and doping has shown wide development prospect. Until now, the highest ZT value of 2.62 has been achieved in Al doped samples, which is twice as much as the original pure Cu2Se. Herein, various doping elements from all main groups and some transitional groups that have been used as dopants in enhancing the TE performance of Cu2Se are summarized, and the mechanisms of TE performance enhancement are analyzed. In addition, points of great concern for further enhancing the TE performance of doped Cu2Se are proposed.

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Section: Introductionmentioning

confidence: 99%

Doping Effect on Cu2Se Thermoelectric Performance: A Review

et al. 2020

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“…2 Among numerous thermoelectric materials, bismuth telluride (Bi 2 Te 3 )based ingots are the most well-established thermoelectric materials at room temperature and almost dominate the industry at present, 3,4 because of the increasing demand for electronic cooling and thermoelectric power generation for low-temperature waste heat. 2 Among numerous thermoelectric materials, bismuth telluride (Bi 2 Te 3 )based ingots are the most well-established thermoelectric materials at room temperature and almost dominate the industry at present, 3,4 because of the increasing demand for electronic cooling and thermoelectric power generation for low-temperature waste heat.…”

Section: Introductionmentioning

confidence: 99%

Electrical and thermal transport properties of spark plasma sintered n-type Bi₂Te_3−xSe_x alloys: the combined effect of point defect and Se content

et al. 2015

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Performance enhancement can be realized in p-type Bi 2 Te 3 but hardly in n-type Se-modified Bi 2 Te 3 alloys fabricated by powder processing as compared with conventional ingots. To reveal the reasons and investigate the optimal Se content in fine-grained n-type Bi 2 Te 3Àx Se x materials processed by mechanical alloying (MA) and spark plasma sintering (SPS), the amount of Se was varied in a wide range and electrical transport properties were investigated and discussed in association with the results of Hall measurements. Thermal transport properties were also studied with Raman spectra. It is revealed that different concentrations of point defects are induced by changing the Se content x from 0 to 1.0 in Bi 2 Te 3Àx Se x . The point defects and their interaction (including donor-like effects) not only largely change the carrier concentration and mobility, but also enhance the phonon scattering that would lead to a decrease of thermal conductivity. Consequently, the optimal composition is confirmed as Bi 2 Te 2.2 Se 0.8 with a corresponding carrier concentration of 4.5 Â 10 19 cm À3 and a maximum ZT value of 0.82 at 473 K, approximately 35% increased than that obtained at optimal Bi 2 Te 2.7 Se 0.3 conventionally used for ingots. This work indicates that the point defects as well as their interaction during MA and SPS shift the optimal Se content from traditional x = 0.3 to x = 0.8 in n-type Bi 2 Te 3Àx Se x , demonstrating the importance of comprehensive control of point defects by adjusting the Se content for different processes.

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“…Key words: Topological Insulator -Bismuth -Antimony -Chalcogenide -GaAs Topological materials attracted much attention in the last decade due to their unique physical properties. In such condensed matter systems, the electronic surface states are topologically protected from the environment, making them an ideal platform for future Quantum devices 1,2 . In their pioneer paper, Kane and Mele predicted the existence of Topological Insulators (TIs) 3 , which are insulators in the bulk and exhibit metallic surface states.…”

mentioning

confidence: 99%

Integration of the Rhombohedral BiSb(0001) Topological Insulator on a Cubic GaAs(001) Substrate

Sadek

Dhungana

Coratger

et al. 2021

ACS Appl. Mater. Interfaces

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Bismuth-Antimony alloys () is the first reported 3D Topological Insulator (TI). Among many TIs reported to the date, it remains the most promising for spintronic applications thanks to its large conductivity, its colossal spin Hall angle, and the possibility to build low current spin-orbit-torque (SOT) magnetoresistive random access memories (MRAM). Nevertheless, the 2D integration of TIs on industrial standards is lacking. In this work, we report the inte-

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Electronic properties of nano-structured bismuth-antimony materials

Abstract: Bismuth antimony (Bi1−xSbx) is one of the most important materials systems for fundamental materials science, condensed matter physics, low temperature thermoelectrics, infrared applications, and beyond.

Cited by 37 publications

References 87 publications

Doping Effect on Cu2Se Thermoelectric Performance: A Review

Doping Effect on Cu2Se Thermoelectric Performance: A Review

Electrical and thermal transport properties of spark plasma sintered n-type Bi₂Te_3−xSe_x alloys: the combined effect of point defect and Se content

Integration of the Rhombohedral BiSb(0001) Topological Insulator on a Cubic GaAs(001) Substrate

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Electronic properties of nano-structured bismuth-antimony materials

Abstract: Bismuth antimony (Bi1−xSbx) is one of the most important materials systems for fundamental materials science, condensed matter physics, low temperature thermoelectrics, infrared applications, and beyond.

Cited by 37 publications

References 87 publications

Doping Effect on Cu2Se Thermoelectric Performance: A Review

Doping Effect on Cu2Se Thermoelectric Performance: A Review

Electrical and thermal transport properties of spark plasma sintered n-type Bi2Te3−xSex alloys: the combined effect of point defect and Se content

Integration of the Rhombohedral BiSb(0001) Topological Insulator on a Cubic GaAs(001) Substrate

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Electrical and thermal transport properties of spark plasma sintered n-type Bi₂Te_3−xSe_x alloys: the combined effect of point defect and Se content