Electronic properties of isolated GaNAsM clusters: photoionization-, photodissociation- and photoluminescence quantum yields

Abstract

Photoionization quantum yields of Ga N As M clusters with N + M = 85 ± 5 atoms in the spectral range of ω = 3.5-6.4 eV have been investigated by measuring their total photoabsorption and photoionization cross sections. It is found that the photoionization quantum yields of these clusters are strongly increased by about two orders of magnitude against the values of bulk GaAs. Photodissociation of the cluster provides another efficient channel whereas photoluminescence plays a minor role for the observed cluster size distributions with N + M typically between 30 and 130 atoms.

Concept of an ionizing time-domain matter-wave interferometer

“…Although SPI yields are not quantitatively known for all materials, the process has been shown to be dominant in several systems, also in competition with fragmentation and photoemission. This applies to semiconductor nanoparticles [58] as well as to metal clusters [59]. In our simulations (Figs.…”