Electronic Properties of InGaN/GaN Vertical‐Cavity Lasers

Piprek, Joachim; Li, Zhan‐Ming; DenBaars, Steven P.; Nakamura, Shuji

doi:10.1002/9783527610723.ch19

Cited by 6 publications

(6 citation statements)

References 37 publications

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“…This overcomes the detrimental effect of built-in polarization observed with thinner quantum wells. 3 However, also for this improved VCSEL design, our simulations reveal current crowding at the ITO aperture as well as strong electron leakage into the p-GaN layer (similar to Fig. 2).…”

Section: Nm Vcsel Designsupporting

confidence: 74%

“…Based on our previous experience with VCSEL design and simulation, 3 we here analyze these recently manufactured GaN-VCSELs using advanced laser simulation software. 4 The simulation self-consistently combines carrier transport, photon emission, and multimode optical wave guiding.…”

Section: 2mentioning

confidence: 99%

“…5 Such AlGaN layer also reduces the current crowding as it enforces a more uniform hole injection into the MQW. 3 …”

Section: Nm Vcsel Designmentioning

confidence: 99%

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Design optimization of GaN-based VCSELs

Piprek¹,

2009

2009 9th International Conference on Numerical Simulation of Optoelectronic Devices

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-We analyze recently manufactured designs of electrically pumped GaN-based vertical-cavity surface-emitting lasers (VCSELs) using advanced laser simulation software. Thick quantum wells are found to allow for the almost complete elimination of the built-in quantum well polarization field. The simulations also reveal several performance limiting effects, e.g., current crowding and electron leakage. Design optimization options are proposed and discussed.

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Section: Nm Vcsel Designsupporting

confidence: 74%

Section: 2mentioning

confidence: 99%

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Design optimization of GaN-based VCSELs

Piprek¹,

2009

2009 9th International Conference on Numerical Simulation of Optoelectronic Devices

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“…More details on model and parameters are given elsewhere. 5 A similar model was previously employed in the analysis of high-power GaN-based edge-emitting lasers, resulting in very good agreement with measurements. 6 The first continuous-wave (CW) operation of a current-injected GaN-VCSEL was demonstrated in 2008 at a low temperature of 77K utilizing an n-side AlN/GaN DBR with superlattice interlayers for strain relaxation and a p-side Ta 2 O 5 /SiO 2 dielectric DBR.…”

mentioning

confidence: 54%

What is the problem with GaN-based VCSELs?

Piprek¹

2013

2013 13th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)

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In contrast to the impressive progress of GaNbased edge-emitting lasers in recent years, III-nitride vertical-cavity surface-emitting lasers (VCSELs) still exhibit severe performance limitations. Using advanced device simulation, this presentation evaluates design and material issues with different GaN-VCSEL concepts and identifies performance limiting internal mechanisms.Similar to widely used GaAs-based vertical-cavity surface-emitting lasers (VCSELs), GaN-based VCSELs are expected to show various advantages over their edge-emitting counterparts, including lower manufacturing costs, circular and low-divergence output beam, single longitudinal mode emission, low threshold, high-speed modulation, high-density two-dimensional arrays, wafer-level testing, and longer lifetime. Potential applications of GaN-VCSELs include laser display, solid-state lighting, high-density optical data storage, high-resolution printing, low-cost optical communication, and bio-sampling. However, in contrast to the success of GaNbased edge-emitting lasers in recent years, GaN-VCSELs still face significant challenges. 1 One of the key material problems is the poor quality of AlGaN/GaN distributed Bragg reflectors (DBRs) due to the large lattice mismatch of GaN and AlN. A possible solution is the use of one or two dielectric DBRs. However, the employment of dielectric DBRs on both sides of the VCSEL cavity requires the removal of the majority of the GaN substrate combined with a precise control of the remaining cavity length. 2 This presentation evaluates different current-injected GaN-VCSEL design concepts that show room-temperature (RT) continuous-wave (CW) operation. The design of VCSELs in general is very demanding and numerical simulation is often used for design optimization. 3 We here employ the laser simulation software PICS3D 4 that self-consistently combines the computation of carrier transport, energy band structure, optical gain, optical modes, and self-heating. The transport model includes drift and diffusion of electrons and holes, Fermi statistics, built-in polarization and thermionic emission at hetero-interfaces, as well as photon emission, Auger recombination, and defect-related Shockley-Read-Hall (SRH) recombination. For the quantum wells, Schrödinger and Poisson equations are solved iteratively to account for the quantum-confined Stark effect (QCSE) caused by nitride polarization. Stimulated and spontaneous emission of photons within the quantum well is calculated self-consistently based on the wurtzite energy band structure. More details on model and parameters are given elsewhere. 5 A similar model was previously employed in the analysis of high-power GaN-based edge-emitting lasers, resulting in very good agreement with measurements. 6 Fig. 1: Vertical profile of refractive index and standing optical wave in the center of the VCSEL from Ref. 9.The first continuous-wave (CW) operation of a current-injected GaN-VCSEL was demonstrated in 2008 at a low temperature of 77K utilizing an n-side AlN/GaN DBR with superlattice i...

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“…Electrically pumped GaN-VCSELs have been demonstrated only recently and they exhibit severe performance restrictions. 1,2 Based on our previous experience with GaN-based VCSEL design and simulation, 3 we here analyze some recently manufactured GaN-VCSELs using advanced laser simulation software. 4 The simulation self-consistently combines carrier transport, photon emission, and multimode optical wave guiding.…”

Section: Introductionmentioning

confidence: 99%

GaN-based VCSELs: analysis of internal device physics and performance limitations

Piprek¹,

2010

SPIE Proceedings

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GaN-based vertical-cavity surface-emitting lasers (VCSELs) are expected to exhibit several advantages over their already widely used edge-emitting counterparts, including lower manufacturing costs, circular output beams, and longer lifetime. However, in contrast to the great success of GaN-based edge-emitting lasers in recent years, GaN-VCSELs still face significant challenges. Electrically pumped devices have been demonstrated only recently and they exhibit severe performance restrictions. We here analyze these recently manufactured GaN-VCSELs using advanced laser simulation software. The simulation self-consistently combines carrier transport, photon emission, and multi-mode optical wave guiding. For the quantum wells, Schrödinger and Poisson equations are solved iteratively at every bias point to account for the Quantum-Confined Stark Effect. Our analysis shows that thick quantum wells allow for the almost complete elimination of the built-in quantum well polarization field. The simulations also reveal several performance limiting effects, e.g., gain-peak offset, current crowding, and electron leakage. Design optimization options are discussed and simulated.

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Electronic Properties of InGaN/GaN Vertical‐Cavity Lasers

Cited by 6 publications

References 37 publications

Design optimization of GaN-based VCSELs

Design optimization of GaN-based VCSELs

What is the problem with GaN-based VCSELs?

GaN-based VCSELs: analysis of internal device physics and performance limitations

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