Electronic Properties of Graphene Heterostructures with Hexagonal Crystals

Wallbank, John

doi:10.1007/978-3-319-07722-2

Cited by 12 publications

(8 citation statements)

References 53 publications

(108 reference statements)

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“…3 Model of the tunneling current in Gr/hBN/Gr and Gr/hBN/BGr devices Here we describe the calculation of the tunneling for low-energy electrons between graphene layers in Gr/hBN/Gr and Gr/hBN/BGr devices, following models developed in Refs. (16,34,27) and similar theories in Refs. (35,36,37,38,39).…”

Section: Transport Measurementssupporting

confidence: 66%

Tuning the valley and chiral quantum state of Dirac electrons in van der Waals heterostructures

Wallbank

Ghazaryan

Misra

et al. 2016

Science

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Chirality is a fundamental property of electrons with the relativistic spectrum found in graphene and topological insulators. It plays a crucial role in relativistic phenomena, such as Klein tunneling, but it is difficult to visualize directly. Here, we report the direct observation and manipulation of chirality and pseudospin polarization in the tunneling of electrons between two almost perfectly aligned graphene crystals. We use a strong in-plane magnetic field as a tool to resolve the contributions of the chiral electronic states that have a phase difference between the two components of their vector wave function. Our experiments not only shed light on chirality, but also demonstrate a technique for preparing graphene's Dirac electrons in a particular quantum chiral state in a selected valley.

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Section: Transport Measurementssupporting

confidence: 66%

Tuning the valley and chiral quantum state of Dirac electrons in van der Waals heterostructures

Wallbank

Ghazaryan

Misra

et al. 2016

Science

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“…(a)). Finally, a simultaneous transformation of all the perturbation parameters ,

\begin{matrix} true \\ right (\begin{matrix} U_{0}^{+} \\ U_{0}^{-} \end{matrix}) & \to & left {\hat{R}}_{- \frac{2 π}{3}} ((), \begin{matrix} U_{0}^{+} \\ U_{0}^{-} \end{matrix}), ((), \begin{matrix} U_{1}^{+} \\ U_{1}^{-} \end{matrix}) \to {\hat{R}}_{\frac{2 π}{3}} ((), \begin{matrix} U_{1}^{+} \\ U_{1}^{-} \end{matrix}), \\ right (\begin{matrix} U_{3}^{+} \\ U_{3}^{-} \end{matrix}) & \to & left {\hat{R}}_{\frac{2 π}{3}} ((), \begin{matrix} U_{3}^{+} \\ U_{3}^{-} \end{matrix}), \end{matrix}

is equivalent to a coordinate shift

H (boldr) \to H (boldr - \frac{4 π}{3 b^{2}} b_{0})

and therefore leaves the band structure unchanged.…”

Section: Graphene On Aligned Hbnmentioning

confidence: 99%

Moiré superlattice effects in graphene/boron‐nitride van der Waals heterostructures

et al. 2015

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“…In order to display in more detail the key features of the device characteristics, Fig. 2b and c In order to explain the physics of the electron tunnelling in these devices, we used a theoretical model [30][31][32][33] which takes into account the unique band structure of graphene, the physics of the eigenstates of the massless Dirac fermions in the graphene layers and the effect of temperature on the device characteristics. The results of this model, shown in Fig.…”

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confidence: 99%

Twist-controlled resonant tunnelling in graphene/boron nitride/graphene heterostructures

et al. 2014

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Recent developments in the technology of van der Waals heterostructures made from two-dimensional atomic crystals have already led to the observation of new physical phenomena, such as the metal-insulator transition and Coulomb drag, and to the realization of functional devices, such as tunnel diodes, tunnel transistors and photovoltaic sensors. An unprecedented degree of control of the electronic properties is available not only by means of the selection of materials in the stack, but also through the additional fine-tuning achievable by adjusting the built-in strain and relative orientation of the component layers. Here we demonstrate how careful alignment of the crystallographic orientation of two graphene electrodes separated by a layer of hexagonal boron nitride in a transistor device can achieve resonant tunnelling with conservation of electron energy, momentum and, potentially, chirality. We show how the resonance peak and negative differential conductance in the device characteristics induce a tunable radiofrequency oscillatory current that has potential for future high-frequency technology.

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Electronic Properties of Graphene Heterostructures with Hexagonal Crystals

Cited by 12 publications

References 53 publications

Tuning the valley and chiral quantum state of Dirac electrons in van der Waals heterostructures

Tuning the valley and chiral quantum state of Dirac electrons in van der Waals heterostructures

Moiré superlattice effects in graphene/boron‐nitride van der Waals heterostructures

Twist-controlled resonant tunnelling in graphene/boron nitride/graphene heterostructures

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