2016
DOI: 10.1063/1.4939971
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Electronic properties of freestanding Ti3C2Tx MXene monolayers

Abstract: We report on the electrical characterization of single MXene Ti3C2Tx flakes (where T is a surface termination) and demonstrate the metallic nature of their conductivities. We also show that the carrier density can be modulated by an external gate voltage. The density of free carriers is estimated to be 8 ± 3 × 1021 cm−3 while their mobility is estimated to be 0.7 ± 0.2 cm2/V s. Electrical measurements, in the presence of a magnetic field, show a small, but clearly discernable, quadratic increase in conductance… Show more

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Cited by 184 publications
(171 citation statements)
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“…As noted previously [32], our FOM is as good as un-doped, chemically vapor-deposited graphene films [28] The relatively high FOM of these films is mostly because, at ≈ 10 28 m −3 , the density of charge carriers is high [32,43], leading to a high DC conductivity. Our films are not as good as doped CVD graphene [29], ITO [33] or Ag-nanowires [27].…”
Section: Resultsmentioning
confidence: 55%
“…As noted previously [32], our FOM is as good as un-doped, chemically vapor-deposited graphene films [28] The relatively high FOM of these films is mostly because, at ≈ 10 28 m −3 , the density of charge carriers is high [32,43], leading to a high DC conductivity. Our films are not as good as doped CVD graphene [29], ITO [33] or Ag-nanowires [27].…”
Section: Resultsmentioning
confidence: 55%
“…The details can be found elsewhere [34]. To deposit single Ti 3 C 2 T x flakes, they were first dispersed in water-with a concentration of ≈ 1 to 2 mg/ml-and spincoated on Si wafers.…”
Section: Introductionmentioning
confidence: 99%
“…The microribbons were contacted using standard electron beam lithography and metal deposition (Ti/Au 5/120 nm) followed by lift-off in acetone [36]. A second electron beam lithography step was used to create a rectangular opening in PMMA around the patterned graphene.…”
mentioning
confidence: 99%