Electronic properties of embedded graphene: doped amorphous silicon/CVD graphene heterostructures

Arezki, Hakim; Boutchich, Mohamed; Alamarguy, David; Madouri, Ali; José, Alvarez; Cabarrocas, Pere Roca i; Kleider, Jean‐Paul; Yao, Fei; Lee, Young Hee

doi:10.1088/0953-8984/28/40/404001

Cited by 6 publications

(4 citation statements)

References 44 publications

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“…Among them, Parylene C (PC) (C 8 H 7 Cl) n is the most popular for microelectronic and medical coating applications. , Deposited via chemical vapor deposition (CVD), this polymer possesses many desirable properties that make it a very versatile material especially in the field of implantable medical devices and electronics. , For instance, PC is widely used as an encapsulating coating film in a biological environment owing to its high conformability , and class VI biocompatibility and is United States Food and Drug Administration-approved . As for electronics, PC is broadly employed not only as a dielectric , but also as a flexible substrate , in electronics and, in particular, in organic electronics where the deposition process is compatible with organic materials and nanomaterial-based electronics such as carbon nanotubes, ,, graphene, − and transition metal dichalcogenides , where the influence of water molecules is strongly diminished. − …”

Section: Introductionmentioning

confidence: 99%

Effect of the Al₂O₃ Deposition Method on Parylene C: Highlights on a Nanopillar-Shaped Surface

Njeim

Alamarguy

et al. 2020

ACS Omega

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Parylene C (PC) has attracted tremendous attention throughout the past few years due to its extraordinary properties such as high mechanical strength and biocompatibility. When used as a flexible substrate and combined with high-κ dielectrics such as aluminum oxide (Al 2 O 3 ), the Al 2 O 3 /PC stack becomes very compelling for various applications in fields such as biomedical microsystems and microelectronics. For the latter, the atomic layer deposition of oxides is particularly needed as it allows the deposition of high-quality and nanometer-scale oxide thicknesses. In this work, atomic layer deposition (ALD) and electron beam physical vapor deposition (EBPVD) of Al 2 O 3 on a 15 μm-thick PC layer are realized and their effects on the Al 2 O 3 /PC resulting stack are investigated via X-ray photoelectron spectroscopy combined with atomic force microscopy. An ALD-based Al 2 O 3 /PC stack is found to result in a nanopillar-shaped surface, while an EBPVD-based Al 2 O 3 / PC stack yields an expected smooth surface. In both cases, the Al 2 O 3 /PC stack can be easily peeled off from the reusable SiO 2 substrate, resulting in a flexible Al 2 O 3 /PC film. These fabrication processes are economic, high yielding, and suitable for mass production. Although ALD is particularly appreciated in the semiconducting industry, EBPVD is here found to be better for the realization of the Al 2 O 3 /PC flexible substrate for micro-and nanoelectronics.

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Section: Introductionmentioning

confidence: 99%

Effect of the Al₂O₃ Deposition Method on Parylene C: Highlights on a Nanopillar-Shaped Surface

Njeim

Alamarguy

et al. 2020

ACS Omega

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“…In this study, we propose an inverted course of action to produce graphene/silicon heterostructures, where a 2D material serves as a substrate for a-Si:H deposition performed by a well-known plasma-enhanced chemical vapor deposition (PECVD) process. The idea of silicon film deposition on CVD graphene has already been verified by Arezki et al [18] and Lupina et al [19]. However, in these cases, the graphene layer was transferred by polymer-assisted technique to SiO 2 /Si substrates before the PECVD process started.…”

Section: Introductionmentioning

confidence: 98%

Transferless Inverted Graphene/Silicon Heterostructures Prepared by Plasma-Enhanced Chemical Vapor Deposition of Amorphous Silicon on CVD Graphene

et al. 2020

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The heterostructures of two-dimensional (2D) and three-dimensional (3D) materials represent one of the focal points of current nanotechnology research and development. From an application perspective, the possibility of a direct integration of active 2D layers with exceptional optoelectronic and mechanical properties into the existing semiconductor manufacturing processes is extremely appealing. However, for this purpose, 2D materials should ideally be grown directly on 3D substrates to avoid the transferring step, which induces damage and contamination of the 2D layer. Alternatively, when such an approach is difficult—as is the case of graphene on noncatalytic substrates such as Si—inverted structures can be created, where the 3D material is deposited onto the 2D substrate. In the present work, we investigated the possibility of using plasma-enhanced chemical vapor deposition (PECVD) to deposit amorphous hydrogenated Si (a-Si:H) onto graphene resting on a catalytic copper foil. The resulting stacks created at different Si deposition temperatures were investigated by the combination of Raman spectroscopy (to quantify the damage and to estimate the change in resistivity of graphene), temperature-dependent dark conductivity, and constant photocurrent measurements (to monitor the changes in the electronic properties of a-Si:H). The results indicate that the optimum is 100 °C deposition temperature, where the graphene still retains most of its properties and the a-Si:H layer presents high-quality, device-ready characteristics.

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“…It is widely accepted that graphene produced with chemical vapor deposition (CVD) will form the cornerstone of future graphene-based chemical, biological, and other types of sensors 6 . This production method combined with FIB texturing capabilities could indeed produce high quality tailored graphene structures, potentially on a large scale that is a prerequisite for exploiting graphene excellent mechanical strength, thermal and electrical conductivity, compactness, and potentially low cost.…”

Section: Introductionmentioning

confidence: 99%

Selective growth of graphene films on gallium-focused ion beam irradiated domains

Giérak¹,

Raynaud²,

Guiziou³

et al. 2022

Journal of Vacuum Science &Amp; Technology B

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Graphene, a single layer of carbon atoms tightly bound in a hexagonal honeycomb lattice to form a two-dimensional lattice, is a very interesting material with promising electronic, optical, chemical, and mechanical applicative potential [Geim and Novoselov, Nat. Mater. 6, 183 (2007)]. The properties of graphene make it suitable for a wide range of applications; however, its applicative future still depends on large scale technologies capable to robustly and reproducibly transfer its outstanding intrinsic properties into devices or complex structures. It must be recognized that a crucial technological problem, that still inhibits the applicability of high quality graphene material properties, is related to the patterning of this material using traditional top down instruments and lithographical methods. In this work, we will detail our investigations on applying a precise 30 keV Ga+ ion irradiation to selectively shape and modify a copper precursor surface for promoting the local growth of graphene surface domains. The morphology of these domains is investigated using scanning tunneling microscopy and spectroscopy to probe simultaneously the structural and the electronic properties at the atomic scale of the graphene films.

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Electronic properties of embedded graphene: doped amorphous silicon/CVD graphene heterostructures

Cited by 6 publications

References 44 publications

Effect of the Al₂O₃ Deposition Method on Parylene C: Highlights on a Nanopillar-Shaped Surface

Effect of the Al₂O₃ Deposition Method on Parylene C: Highlights on a Nanopillar-Shaped Surface

Transferless Inverted Graphene/Silicon Heterostructures Prepared by Plasma-Enhanced Chemical Vapor Deposition of Amorphous Silicon on CVD Graphene

Selective growth of graphene films on gallium-focused ion beam irradiated domains

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Electronic properties of embedded graphene: doped amorphous silicon/CVD graphene heterostructures

Cited by 6 publications

References 44 publications

Effect of the Al2O3 Deposition Method on Parylene C: Highlights on a Nanopillar-Shaped Surface

Effect of the Al2O3 Deposition Method on Parylene C: Highlights on a Nanopillar-Shaped Surface

Transferless Inverted Graphene/Silicon Heterostructures Prepared by Plasma-Enhanced Chemical Vapor Deposition of Amorphous Silicon on CVD Graphene

Selective growth of graphene films on gallium-focused ion beam irradiated domains

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Effect of the Al₂O₃ Deposition Method on Parylene C: Highlights on a Nanopillar-Shaped Surface

Effect of the Al₂O₃ Deposition Method on Parylene C: Highlights on a Nanopillar-Shaped Surface