Electronic Properties of Doped Semiconductors

Shklovskiǐ, B. I.; Efros, A. L.

doi:10.1007/978-3-662-02403-4

Cited by 3,951 publications

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“…28). The T À 1/2 behaviour, however, could be interpreted in a number of ways, particularly conventional Efros-Shklovskii (ES) VRH 29 or inter-cluster hopping 30 . In conventional ES VRH, Coulomb interaction effects lead to a soft-gapped density of states around E F giving r ¼ r ES exp (T ES /T) 1/2 , where T ES ¼ 2.8 e 2 /kk B L C , and k is the dielectric constant 29 .…”

Section: Electrochemical Thin Film Transistorsmentioning

confidence: 99%

“…The T À 1/2 behaviour, however, could be interpreted in a number of ways, particularly conventional Efros-Shklovskii (ES) VRH 29 or inter-cluster hopping 30 . In conventional ES VRH, Coulomb interaction effects lead to a soft-gapped density of states around E F giving r ¼ r ES exp (T ES /T) 1/2 , where T ES ¼ 2.8 e 2 /kk B L C , and k is the dielectric constant 29 . A similar T dependence can, however, also be obtained from thermally assisted tunnelling between nanoscopic conductive regions in a more insulating matrix, due to the Coulomb penalty associated with single carrier charging 30 .…”

Section: Electrochemical Thin Film Transistorsmentioning

confidence: 99%

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Hopping transport and the Hall effect near the insulator–metal transition in electrochemically gated poly(3-hexylthiophene) transistors

et al. 2012

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Despite 35 years of investigation, much remains to be understood regarding charge transport in semiconducting polymers, including the ultimate limits on their conductivity. Recently developed ion gel gating techniques provide a unique opportunity to study such issues at very high charge carrier density. Here we have probed the benchmark polymer semiconductor poly(3-hexylthiophene) at electrochemically induced three-dimensional hole densities approaching 10 21 cm À 3 (up to 0.2 holes per monomer). Analysis of the hopping conduction reveals a remarkable phenomenon where wavefunction delocalization and Coulomb gap collapse are disrupted by doping-induced disorder, suppressing the insulator-metal transition, even at these extreme charge densities. Nevertheless, at the highest dopings, we observe, for the first time in a polymer transistor, a clear Hall effect with the expected field, temperature and gate voltage dependencies. The data indicate that at such mobilities (B0.8 cm 2 V À 1 s À 1 ), despite the extensive disorder, these polymers lie close to a regime of truly diffusive band-like transport.

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Section: Electrochemical Thin Film Transistorsmentioning

confidence: 99%

Section: Electrochemical Thin Film Transistorsmentioning

confidence: 99%

Hopping transport and the Hall effect near the insulator–metal transition in electrochemically gated poly(3-hexylthiophene) transistors

et al. 2012

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“…On the other hand the probability of phonon-activated transitions towards higher energy levels also depends exponentially on the energy difference. When the distribution is very wide in the energy scale, it is necessary to consider the combination of probabilities for hopping at different distances and hopping at different levels, as is well established in the theories of hopping conductivity for bulk amorphous semiconductors, 137,138 and this will be summarily discussed below. The extent of disorder is an important aspect for characterizing the electronic properties of nanostructured materials, first because of the dispersion of energy of charge carrier within quantum dots, but also due to the influence on long range paths for electron transport.…”

Section: Transport Propertiesmentioning

confidence: 99%

“…Later, more systematic treatments were initiated that were based on percolation arguments, the so-called critical path analysis. 137,138 VRH has been observed in a wide variety of systems such as Si-and Ge-based inorganic semiconductors, 209 conducting polymers and assemblies of quantum dots. 210 The hopping conductivity has been amply studied for bulk amorphous semiconductors 137,138 and organic semiconductors with a Gaussian DOS, 206,207,[211][212][213][214][215][216][217] but these developments have not been generally applied in electrochemistry experiments.…”

Section: Transport In a Continuous Density Of Statesmentioning

confidence: 99%

Physical electrochemistry of nanostructured devices

Bisquert

2008

Phys. Chem. Chem. Phys.

243

273

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“…The original model is based on the idea of DEs in the hopping network or 'infinite cluster' along which the current flows in a disordered medium [19]. The DEs can be understood as the end points of percolation paths within an insulating island.…”

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confidence: 99%

Reappearance of linear hole transport in an ambipolar undoped GaAs/AlGaAs quantum well

Taneja

Shlimak

Narayan

et al. 2017

J. Phys.: Condens. Matter

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Ambipolar transport, or the ability to switch between electrons and holes in the same device, has strong implications towards the implementation of functional devices: for instance, creating gate-defined n-and p-type conducting channels in the same device can be exploited in thermoelectric power generation, as well as towards spintronic applications by tuning between large (holes) and small (electrons) spinorbit coupling. Equally, ambipolar transport is also of much interest in fundamental studies of scattering, interaction and spin related phenomena since electrons and holes have very different effective masses, band structures and spin properties [1,2]. Chen et al [1] and Croxall et al [2] studied the density dependence of µ p and µ e in ambipolar GaAs/AlGaAs single heterojunction devices and quantum wells (QWs) respectively. The mobilities were found to depend not only on the AbstractWe report the results of an investigation of ambipolar transport in a quantum well of 15 nm width in an undoped GaAs/AlGaAs structure, which was populated either by electrons or holes using positive or negative gate voltage V tg , respectively. More attention was focussed on the low concentration of electrons n and holes p near the metal-insulator transition (MIT). It is shown that the electron mobility µ e increases almost linearly with increase of n and is independent of temperature T in the interval 0.3 K-1.4 K, while the hole mobility µ p depends non-monotonically on p and T. This difference is explained on the basis of the different effective masses of electrons and holes in GaAs. Intriguingly, we observe that at low p the source-drain current (I SD )-voltage (V) characteristics, which become non-linear beyond a certain I SD , exhibit a re-entrant linear regime at even higher I SD . We find, remarkably, that the departure and reappearance of linear behaviour are not due to non-linear response of the system, but due to an intrinsic mechanism by which there is a reduction in the net number of mobile carriers. This effect is interpreted as evidence of inhomogeneity of the conductive 2D layer in the vicinity of MIT and trapping of holes in 'dead ends' of insulating islands. Our results provide insights into transport mechanisms as well as the spatial structure of the 2D conducting medium near the 2D MIT.Keywords: non-linear I-V characteristics, two-dimensional hole gas, metal-insulator transition (Some figures may appear in colour only in the online journal)Original content from this work may be used under the terms of the Creative Commons Attribution 3.0 licence. Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI.1361-648X/17/185302+7$33.00

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Electronic Properties of Doped Semiconductors

Cited by 3,951 publications

References 0 publications

Hopping transport and the Hall effect near the insulator–metal transition in electrochemically gated poly(3-hexylthiophene) transistors

Hopping transport and the Hall effect near the insulator–metal transition in electrochemically gated poly(3-hexylthiophene) transistors

Physical electrochemistry of nanostructured devices

Reappearance of linear hole transport in an ambipolar undoped GaAs/AlGaAs quantum well

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