Electronic properties of cubic ScGaAs and ScGaN ternaries and superlattices

Boudaoud, L.; Adli, W.; Mecheref, Rachid; Sekkal, Nadir; Tair, F.; Amrani, B.; Louhibi, Samira; Tebboune, A.

doi:10.1016/j.spmi.2009.11.006

Cited by 6 publications

(1 citation statement)

References 27 publications

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“…The investigation of physical properties of the binary compounds under hydrostatic pressure has been an active topic of researches in condensed matter physics over the previous decades [9]. In our earlier work, we published the results on the electronic properties of cubic ScGaAs and ScGaN ternar-ies and superlattices [10]. The phase transition from the rocksalt to the zincblende structure was investigated, and the possibility of zincblende/zincblende GaN/Sc Ga 1− N and GaAs/Sc Ga 1− As superlattices was expected, and direct gaps were found to be possible in these systems, predicting them as good candidates for optoelectronic applications.…”

Section: Introductionmentioning

confidence: 99%

First Principles Study of High-Pressure Phases of ScN

et al. 2021

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We report the results of first-principles total-energy calculations for structural properties of scandium nitride (ScN) semiconductor compound in NaCl-type (B1), CsCl-type (B2), zincblende-type (B3), wurtzite-type (B4), NiAs-type (B81), CaSi-type (Bc), B-Sn-type (A5), and CuAu-type (L10) structures. Calculations have been performed with the use of the all-electron full-potential linearized augmented plane wave FP-LAPW method based on density-functional theory (DFT) in the generalized gradient approximation (GGA) for the exchange correlation energy functional. We predict a new phase transition from the most stable cubic NaCl-type structure (B1) to the B-Sn-type one (A5) at 286.82 GPa with a direct band-gap energy of about 1.975 eV. Our calculations show that ScN transforms from the orthorhombic CaSi-type structure (Bc) to A5 at 315 GPa. In agreement with earlier ab initio works, we find that B1 phase transforms to Bc, L10, and B2 structures at 256.27 GPa, 302.08 GPa, and 325.97 GPa, respectively. The electronic structure of A5 phase shows that ScN exhibits a direct band-gap at X point, with Eg of about 1.975 eV.

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Section: Introductionmentioning

confidence: 99%

First Principles Study of High-Pressure Phases of ScN

et al. 2021

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Single‐Crystal Multilayer Nitride, Metal, and Oxide Structures on Engineered Silicon for New‐Generation Radio Frequency Filter Applications

Dargis¹,

Clark

Ansari

et al. 2020

Physica Status Solidi (a)

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Molecular beam epitaxy is used for growth of structures with ScAlN for radio frequency filter applications. The nitride layers are grown directly on Si substrates for surface acoustic wave resonators, Lamb acoustic wave resonators, and on an epitaxial Mo on Er2O3 buffer layer on Si for film bulk acoustic resonators (FBARs). The crystal structure of the ScAlN layer is defined by Sc concentration. It can vary from wurtzite to hexagonal. Good crystal quality of the Mo layer results in low sheet resistance which is very close to that of the bulk material. Enhanced electroacoustic performance is achieved in fabricated acoustic devices. A Lamb acoustic wave resonator with ScAlN grown directly on Si demonstrates a high coupling factor (4.8%) and figure of merit (Q × kt2) (9.1) at a resonance frequency of 9.02 GHz. A fundamental resonance frequency 4.32 GHz is achieved for an FBAR device fabricated using the structure with the nitride layer on an epitaxial metal electrode. At the 4.32 GHz resonance frequency, the extracted figure of merit of the resonator is 10.6.

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