Electronic properties of a UIrGe single crystal

Prokeš, K.; Tahara, Tetsuya; Fujita, Toshizo; Goshima, H.; Takabatake, Toshiro; Mihalik, M.; Menovsky, A.A.; Fukuda, Shuichi; Sakurai, J.

doi:10.1103/physrevb.60.9532

Cited by 22 publications

(28 citation statements)

References 36 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…This is four times higher than the value at ambient pressure of 20 mJ/molK 2 . The value of 15GPa  80 mJ/molK 2 is similar to the value of  extrapolated from the paramagnetic limit of the heat capacity data 27) . We also attempted to calculate the ambient pressure A using the reported 21) value of   20 mJ/molK 2 .…”

Section: Figsupporting

confidence: 74%

See 1 more Smart Citation

Effect of Pressure on Magnetism of UIrGe

et al. 2017

View full text Add to dashboard Cite

We report the effect of hydrostatic pressure on the electronic state of the antiferromagnet UIrGe, which is isostructural and isoelectronic with the ferromagnetic superconductors UCoGe and URhGe. A series of electrical resistivity measurements in a piston-cylinder-type cell and a cubic-anvil cell were performed at hydrostatic pressures up to 15 GPa. The Néel temperature decreases with increasing pressure. We constructed a p-T phase diagram and estimated the critical pressure pc, where the antiferromagnetism vanishes, as  12 GPa. The antiferromagnetic/paramagnetic transition appears to be first order. We suggest a scenario of competing antiferromagnetic inter-J-and ferromagnetic intra-J*-chain interactions in UIrGe. A moderate increase in the effective electron mass was detected in the vicinity of pc. A discussion of the electronic specific heat  and electron-electron correlation term A using the KadowakiWoods relation is given.

show abstract

Section: Figsupporting

confidence: 74%

“…The magnetic entropy of UIrGe Smag = 0.21R ln2 27) is comparable to that of URhGe 28) but significantly larger than Smag = 0.003R ln2 of UCoGe 9) . Figure 1 suggests that the contraction of the unit cell volume and the reduction of the distance dU-U by hydrostatic pressure may drive the UIrGe compound to a magnetic instability.…”

Section: Introductionmentioning

confidence: 76%

Effect of Pressure on Magnetism of UIrGe

et al. 2017

View full text Add to dashboard Cite

show abstract

“…Here, it may be the soft orthorhombic a-direction, following the basic U-U coordination, forming U-U zig-zag chains stretched along the a-axis. Indeed, the U magnetic moments cannot be oriented along a-direction in UNiGe [3], UCoGe [9] or UIrGe [10] even under influence of high magnetic fields, in analogy with the situation within the ZrNiAl-structure family, where the moments cannot be rotated out of the c-axis.…”

Section: Effect Of Pressure In Utx Compounds With the Tinisi Structurmentioning

confidence: 93%

Lattice anisotropy in uranium ternary compounds: UTX

Mašková

Adamska

Havela

et al. 2012

Journal of Alloys and Compounds

View full text Add to dashboard Cite

a b s t r a c tSeveral U-based intermetallic compounds (UCoGe, UNiGe with the TiNiSi structure type and UNiAl with the ZrNiAl structure type) and their hydrides were studied from the point of view of compressibility and thermal expansion. Confronted with existing data for the compounds with the ZrNiAl structure type a common pattern emerges. The direction of the U-U bonds with participation of the 5f states is distinctly the "soft" crystallographic direction, exhibiting also the highest coefficient of linear thermal expansion. The finding leads to an apparent paradox: the closer the U atoms are together in a particular direction the better they can be additionally compressed together by applied hydrostatic pressure.

show abstract

“…14 We performed temperature scans at various pressures in fixed fields and field scans at various pressures with fixed temperatures. As an example, we display the temperature dependence of the magnetoresistance at various fixed fields under an applied pressure of 6 kbar in Fig.…”

Section: Introductionmentioning

confidence: 99%

“…the increase of the low-temperature resistance is more pronounced compared to the ambient-pressure result. This finding could explain the apparent differences in the temperature dependence of the electrical resistance for polycrystalline 14 (metallic behavior below T N ) and single-crystalline UIrGe (increasing resistance below T N . On the other hand, we find that there is no further enhancement of the low-temperature increase of the electrical resistance between 6 and 9 kbar.…”

mentioning

confidence: 95%

Hybridization and pressure effects in UTX compounds

Alsmadi

Sechovský

Lacerda

et al. 2002

Journal of Applied Physics

View full text Add to dashboard Cite

Abstract:The UTX intermetallic compound (T = transition metal and X = p-electron element) were found to crystallize mainly in two large groups, the orthorhombic TiNiSi and the hexagonal ZrNiAl structure. For both groups, magnetic-ordering phenomena depend sensitively on the 5f-ligand hybridization. The 5f-ligand hybridization is very sensitive to the interatomic distances, which can be effectively controlled by external pressure. Here, we have summarized existing and new pressure studies on various single-crystalline UTX compounds (T = Co, Ni, Ir; X = Al, Ga, Ge). We performed magnetoresistance studies in magnetic fields up to 18 T under external hydrostatic pressure up to 10 kbar. The observed dependencies of the ordering temperatures and the critical fields are compared with the different contributions of the 5f-ligand hybridization, which were deduced from tight-binding calculations. We find relatively weak pressure dependence in compounds, where 5f electrons are more localized, while substantially large pressure effects are found in the more itinerant systems. Uranium compounds have attracted a great deal of attention in the past two decades because of the specific nature of U 5f-electron magnetism. The f electrons of U are found to be intermediate between the delocalized d electrons of the transition metal and the well-localized 4f electrons of the lanthanide. Two mechanisms are known to lead to delocalization the 5f electrons, the direct 5f-5f overlap and the 5f-ligand hybridization.1,2 Comprehensive studies have revealed a large variety of magnetic phenomena starting from weak paramagnetism to various types of (sometimes unusual) long-range magnetic ordering depending on the degree of the 5f-ligand hybridization. Large 5f-ligand hybridization leads to a delocalization of the f electrons, which ultimately leads to a suppression of magnetic moments. On the other hand, in most cases some 5f-ligand hybridization is needed to promote inter-ionic exchange, which confirms a magnetic order ground state. The 5f ligand hybridization depends on several parameters (geometrical surrounding of the 5f atom, coordination, interatomic distances, etc.), and it is determined by the overlap of the respective wavefunctions. The interatomic distances and thus the overlap of wavefunctions can be effectively changed by external pressure.UTX compounds (T = transition metal, X = p-electron element) were found to crystallize mainly in two large groups of crystal structures, the orthorhombic TiNiSi structure and the hexagonal ZrNiAl structure. For both groups, extensive bulk studies revealed a huge magneto-crystalline anisotropy, which is of easy-axis type (c-axis) in the ZrNiAl-structure and easy-plane type (b-c plane) for the TiNiSi-structure compounds. 3-6The huge magnetic anisotropy originates in strong spin-orbit interactions and the presence of large orbital moments, and the magnetic anisotropy was tentatively attributed to the hybridization-mediated anisotropic two-ion interaction. 7In this contribution, we have summarized th...

show abstract

Electronic properties of a UIrGe single crystal

Cited by 22 publications

References 36 publications

Effect of Pressure on Magnetism of UIrGe

Effect of Pressure on Magnetism of UIrGe

Lattice anisotropy in uranium ternary compounds: UTX

Hybridization and pressure effects in UTX compounds

Contact Info

Product

Resources

About