Electronic Properties of a Semiconductor Superlattice II. Low Temperature Mobility Perpendicular to the Superlattice

A study of intersubband scattering in GaAs/AlxGa1−xAs heterostructures by means of a parallel magnetic field

“…From this we infer that intersubband scattering reduces the average carrier mobility by about 50%. Mori and Ando [2] have calculated the mobilities in the lowest and the first excited subband due to intra-and intersubband scattering by impurities for a modulation doped GaAs/AlxGal_xAs superlattice. Since this situation is not very different from a single heterostructure, we compare their theoretical result with our experiment.…”

“…At carrier densities of the order 1 x 1012 cm -2, however, depending on the material parameters, the second subband El starts being populated. The population of E~ opens up a new scattering channel, the intersubband scattering, which should lead to a strong and discontinuous decrease of the mobility in the system [2]. In a recent publication, St6rmer, Gossard and Wiegmann [3] have shown from an analysis of Hall measurements and Shubnikov-de Haas (SdI-I) oscillations, that intersubband scattering leads to a 30% reduction in mobility, when the second subband is occupied.…”

Pseudo-Band-Structure of Disordered Lateral Superlattice in Magnetic Field

“…15,16) In a single heterostructure, F eff is the effective field at the interface. [17][18][19] Next, we introduce small amount of disorder in period, height, and direction of the quantum-wire array.…”

Dynamical Conductivity in Disordered Quantum Wire Array

“…where E 0 ð " d dÞ is the subband energy in a quantum well with " 11,12) In a single heterostructure, F eff is the effective field at the interface. [13][14][15] Next, we introduce small amount of disorder in period, height, and direction of the quantum wire array.…”