Electronic properties of a pulse-doped GaAs structure grown by organometallic vapor phase epitaxy

Nakajima, Shigeru; Kuwata, N.; Nishiyama, N.; Shiga, N.; Hayashi, Hideki

doi:10.1063/1.103469

Cited by 14 publications

(1 citation statement)

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“…Nanocrystal (NC) based ultra-dense flash memory devices are one of the most promising technologies taking advantage of nanostructures within a conventional device. Theoretically, these devices offer several advantages such as extremely low power consumption, ultra-fast data operations and excellent data storage characteristics, when compared to current technologies of non-volatile flash memories [48][49][50][51]. One common device configuration for this technology is shown in Fig.…”

Section: Non-volatile Flash Memoriesmentioning

confidence: 99%

Quantum dot electronic devices: modeling and simulation

Sousa

Freire²,

Silva

2004

phys. stat. sol. (c)

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In this paper, we will review the basic electronic and transport properties of quantum confined structures, discuss the ingredients for the simulation of quantum dot (QD) based electronic devices, and take a closer look at QD based non-volatile flash memories, which became one of the most promising technologies for ultra-dense memory applications, where the quantum tunneling of confined electrons in and out of QDs is the key mechanism for write/erase operations.Despite the concerns on how quantum effects will influence the future of solid-state electronics, the physics of low-dimensional structures is exciting and offers unlimited possibilities. Among several approaches to the development of newer quantum devices, the one based on quantum dots is particularly attractive because the possibility of tailoring their electronic structure by manipulating their shape, size and charge states. Due to these features, QDs are considered one of the building blocks of futuristic applications of nanotechnology. So far, the most attractive possibilities can be separated in two categories: (i) light-emitting/detecting devices and (ii) single-(few) electron transistors. In the first category, the discrete density of states can be tunned to emit and/or detect light in the range between infrared and ultra-violet. These features were confirmed even for nanostructured silicon, which is known for its indirect band gap, but demonstrated light-emitting capabilities [7][8][9]. As for single-electron transistors, they are potential candidates for implementing ultra-dense logic and memory applications [10][11][12][13][14].The goal of this work is to briefly review the theoretical and computational backgrounds of developing tools for the analysis and optimization of semiconductor devices where quantum effects are important. In addition, a brief analysis of Si/SiO 2 QD based non-volatile flash memories will be addressed.

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Section: Non-volatile Flash Memoriesmentioning

confidence: 99%