Electronic properties of a large quantum dot at a finite temperature

Gülveren, Berna; Atav, Ülfet; Tomak, Mehmet

doi:10.1016/j.physe.2005.05.061

Cited by 11 publications

(2 citation statements)

References 33 publications

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“…Under confinement, the dopant location can actually alter the electronic and optical properties of the system in a prominent way . For this reason there are a seemingly large number of theoretical studies on impurity states − in general, and also on their opto-electronic properties, in particular, for a wide range of semiconductor devices. ,− The research trend has become ubiquitous with the excitement of delving into new physics and genuine hope for profound technological impact.…”

Section: Introductionmentioning

confidence: 99%

Influence of Damped Propagation of Dopant on the Excitation Kinetics of Doped Quantum Dots

Pal¹,

Datta²,

Ghosh

2013

J. Phys. Chem. C

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Excitation in quantum dots is a hotly pursued phenomenon. Realizing it, we investigate the excitation kinetics of a repulsive impurity doped quantum dot as the dopant is propagating. Such a propagation is assumed to be important because of its close connection with impurity drift in nanodevices. The problem has been made more realistic by considering the dopant propagation to be damped. For simplicity, we have considered an inherently linear propagation of the dopant, and the impurity potential has been assumed to have a Gaussian nature. The damping strength and the initial spatial stretch of the dopant have been found to fabricate the said kinetics in a delicate way. However, in the overdamped region, we find attainment of stabilization in the excitation rate invariably. Determination of average accelerating force imparted onto the propagating dopant seems to consolidate the findings. The present investigation is believed to provide some useful insight into the phenomenon of damping that has potential importance in nanoelectronic applications.

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Section: Introductionmentioning

confidence: 99%

Influence of Damped Propagation of Dopant on the Excitation Kinetics of Doped Quantum Dots

Pal¹,

Datta²,

Ghosh

2013

J. Phys. Chem. C

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show abstract

“…This makes the differential equation elementary to solve, but of course corresponds not to a "pancake" of point electrons, but to a pool of infinitely long parallel line charges each generating a logarithmic, rather than a point-Coulomb, potential. Thus, it is either a misrepresentation of the actual QD problem [17][18][19][20] or simply an interesting but abstract exercise [21][22][23][24][25].…”

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confidence: 99%

Flat Thomas-Fermi artificial atoms

Ovchinnikov

Halder

Kresin

2014

EPL

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We consider two-dimensional (2D) "artificial atoms" confined by an axially symmetric potential V(ρ). Such configurations arise in circular quantum dots and other systems effectively restricted to a 2D layer. Using the semiclassical method, we present the first fully self-consistent and analytic solution yielding equations describing the density distribution, energy, and other quantities for any form of V(ρ) and an arbitrary number of confined particles. An essential and nontrivial aspect of the problem is that the 2D density of states must be properly combined with 3D electrostatics. The solution turns out to have a universal form, with scaling parameters ρ 2 /R 2 and R/a B * (R is the dot radius and a B * is the effective Bohr radius).

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Excitation kinetics of quantum dot induced by damped propagation of dopant: Role of confinement potential and magnetic field

Pal¹,

Ghosh

2013

Chemical Physics

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Electronic properties of a large quantum dot at a finite temperature

Cited by 11 publications

References 33 publications

Influence of Damped Propagation of Dopant on the Excitation Kinetics of Doped Quantum Dots

Influence of Damped Propagation of Dopant on the Excitation Kinetics of Doped Quantum Dots

Flat Thomas-Fermi artificial atoms

Excitation kinetics of quantum dot induced by damped propagation of dopant: Role of confinement potential and magnetic field

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