Electronic phase-crossover and room temperature ferromagnetism in a two-dimensional (2D) spin lattice

Nair, Akhil K.; Ray, S. J.

doi:10.1039/d0ra09726h

Cited by 17 publications

(11 citation statements)

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“…Alternately, it is also plausible that smaller strain on higher layer numbers can also boost the T c to RT and beyond because the same percentage of strain on higher layer number demonstrates elevated T c and MAE. Recent computational works have also predicted rapid elevation of T c to RT in bulk CGT with increasing strain percentage . Therefore, it is conceivable that for thicker layers T c tends to augment under smaller strain application.…”

Section: Resultsmentioning

confidence: 99%

“…Recent computational works have also predicted rapid elevation of T c to RT in bulk CGT with increasing strain percentage. 34 Therefore, it is conceivable that for thicker layers T c tends to augment under smaller strain application. Hence it is reasonable to speculate that bulk CGT under application of strain would lead to a T c above RT with enhanced magnetism.…”

Section: Resultsmentioning

confidence: 99%

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Enhanced Room Temperature Ferromagnetism in Highly Strained 2D Semiconductor Cr₂Ge₂Te₆

et al. 2022

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Emergent magnetism in van der Waals materials offers exciting opportunities in fabricating atomically thin spintronic devices. One pertinent obstacle has been the low transition temperatures (T c) inherent to these materials, precluding room temperature applications. Here, we show that large structural gradients found in highly strained nanoscale wrinkles in Cr2Ge2Te6 (CGT) lead to significant increases of T c. Magnetic force microscopy was utilized in characterizing multiple strained CGT nanostructures leading to experimental evidence of elevated T c, depending on the strain percentage estimated from finite element analysis. Our findings are further supported by ab initio and DFT studies of the strained material, which indicates that strain directly augments the ferromagnetic coupling between Cr atoms in CGT, influenced by superexchange interaction; this provides strong insight into the mechanism of the enhanced magnetism and T c.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Enhanced Room Temperature Ferromagnetism in Highly Strained 2D Semiconductor Cr₂Ge₂Te₆

et al. 2022

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“…The energy needed to synthesize a monolayer is represented by the formation energy, as expressed by the following equation E normalf normalo normalr normalm = E h B N / N b S e 2 − E normalh normalB normalN − E N b S e 2 where E h B N / N b S e 2 represents the total energy of the hBN/NbSe 2 vdW heterostructure. E hBN and E N b S e 2 represent the total energies of single phase hBN monolayer and NbSe 2 monolayers, respectively.…”

Section: Methodsmentioning

confidence: 99%

“…The energy needed to synthesize a monolayer is represented by the formation energy, 39 as expressed by the following equation…”

Section: ■ Computational Methodsmentioning

confidence: 99%

Electronic Properties of Twisted hBN/NbSe₂ Hetero-structure and Its Application as an Electrode in Lithium-Ion Battery: First-Principle Study

Sahoo,

Kumari,

Gupta

et al. 2024

J. Phys. Chem. C

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Despite the availability of a variety of two-dimensional (2D) materials for potential use as Li-ion battery electrodes, it is difficult to find all the desirable qualities of an electrode in a single material. Therefore, research efforts are ongoing in designing a heterostructure to incorporate the desirable characteristics that are not available in the parent structures. In our work, we have designed a van der Waals heterostructure made of a conducting 2D NbSe 2 -layer and insulating hexagonal boron nitride (h-BN) and applied interlayer twist at different twist angles for potential applications as an electrode in the Li-ion battery. The heterostructure offers a metallic character, which makes the insulating h-BN capable of battery application. The adsorption site changes for different twist angles. For the twist angles of 5.21 and 54.79°, the H-site is the most favorable adsorption site, but for all other twist angles, T-site stays the most favorable adsorption site. When the angle between surfaces is 19.11°, the heterostructure shows better stability as compared to all other configurations in different twist angles. The adsorption energy gets enhanced compared to the individual monolayers, indicating better intercalation. At a twist angle of 19.11°, our structure shows a minimum diffusion barrier of 0.6 eV, whereas at all other twist angles, it shows a nearly 0.9 eV barrier. The open circuit voltage is found to be 0.62 V. The structure shows a specific capacity of 185 mA h g m −1 .

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“…Most of these materials are non-magnetic and according to Mermin-Wagner theorem [4,5], the presence of long-range magnetic ordering in 2D materials is not possible due to thermal fluctuations [6,7]. Despite this, recently several intrinsically magnetic 2D materials have been discovered [8] with finite critical temperature ( T c ), like CrI 3 [9], Cr 2 Ge 2 Se 6 [10], and Cr 2 Ge 2 Te 6 [11,12]. Their electronic properties are varied and among them, 2D ferromagnetic semiconductors are specifically interesting for their use in spin circuits, MRAM and high density storage devices etc.…”

Section: Introductionmentioning

confidence: 99%

Two-dimensional Janus monolayers with tunable electronic and magnetic properties

Mukherjee

Kar

Ray

2022

Journal of Materials Research

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In the post graphene era, the discovery of magnetism in two-dimensional (2D) intrinsic nanomagnets has opened up exciting possibilities for low-dimensional spintronics. In this article, we have reported three new 2D Janus nanomagnets VBrCl 2 , VBrI 2 , and VClBrI for the first time. First-principles based density functional theory calculations reveal that these monolayers are intrinsically magnetic with indirect band gap semiconducting properties and further the magnetic and electronic properties of these monolayers are enhanced with the application of biaxial strain and electric field. We observe interesting electronic and magnetic phase transitions, tunable band gap, and supreme enhancement of the Curie temperature (~ 686%). Large magnetic anisotropic energy (MAE) with high magnetic moment and tunable band gap property make these Janus materials useful candidates for future information storage, optoelectronics, and 2D spin circuit development.

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Electronic phase-crossover and room temperature ferromagnetism in a two-dimensional (2D) spin lattice

Abstract: In the presence of strain, high temperature magnetic ordering in Cr2Ge2Te6 was observed with electronic phase crossover from semiconducting to half-metallic state. On coupling strain and electric field, the Curie temperature reaches 331 K.

Cited by 17 publications

References 50 publications

Enhanced Room Temperature Ferromagnetism in Highly Strained 2D Semiconductor Cr₂Ge₂Te₆

Enhanced Room Temperature Ferromagnetism in Highly Strained 2D Semiconductor Cr₂Ge₂Te₆

Electronic Properties of Twisted hBN/NbSe₂ Hetero-structure and Its Application as an Electrode in Lithium-Ion Battery: First-Principle Study

Two-dimensional Janus monolayers with tunable electronic and magnetic properties

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Electronic phase-crossover and room temperature ferromagnetism in a two-dimensional (2D) spin lattice

Abstract: In the presence of strain, high temperature magnetic ordering in Cr2Ge2Te6 was observed with electronic phase crossover from semiconducting to half-metallic state. On coupling strain and electric field, the Curie temperature reaches 331 K.

Cited by 17 publications

References 50 publications

Enhanced Room Temperature Ferromagnetism in Highly Strained 2D Semiconductor Cr2Ge2Te6

Enhanced Room Temperature Ferromagnetism in Highly Strained 2D Semiconductor Cr2Ge2Te6

Electronic Properties of Twisted hBN/NbSe2 Hetero-structure and Its Application as an Electrode in Lithium-Ion Battery: First-Principle Study

Two-dimensional Janus monolayers with tunable electronic and magnetic properties

Contact Info

Product

Resources

About

Enhanced Room Temperature Ferromagnetism in Highly Strained 2D Semiconductor Cr₂Ge₂Te₆

Enhanced Room Temperature Ferromagnetism in Highly Strained 2D Semiconductor Cr₂Ge₂Te₆

Electronic Properties of Twisted hBN/NbSe₂ Hetero-structure and Its Application as an Electrode in Lithium-Ion Battery: First-Principle Study