Electronic, Optical, and Epsilon Near-Zero Response in Magnetron-Sputtered Tantalum Oxynitride Thin Films

Khalil, Maria; Bashir, Aneeqa; Ullah, Farman; Ramay, Shahid M.; Saleem, Murtaza

doi:10.1007/s11664-023-10900-1

J. Electron. Mater.

2024

DOI: 10.1007/s11664-023-10900-1

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Electronic, Optical, and Epsilon Near-Zero Response in Magnetron-Sputtered Tantalum Oxynitride Thin Films

Maria Khalil,

Aneeqa Bashir,

Farman Ullah

et al.

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Cited by 4 publications

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DFT and experimental investigations on Pr substituted WO3 for electronic, thermoelectric and optical applications

Farooq,

Bibi,

Khalil

et al. 2024

Journal of Physics and Chemistry of Solids

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DFT and experimental investigations on Pr substituted WO3 for electronic, thermoelectric and optical applications

Farooq,

Bibi,

Khalil

et al. 2024

Journal of Physics and Chemistry of Solids

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A comparative study of DFT and experimental investigations for exploring the effect of Ti doping on the electronic, structural, and optical properties of Cu2O

Tahir Malik,

Fakhr-e-Alam,

Ullah

et al. 2024

Physica B: Condensed Matter

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Structural, electronic, and optical properties of Zn-doped V₂O₅ thin films

Ikhlaq,

Sami,

Khalil

et al. 2024

Phys. Scr.

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V2O5 shows a diverse range of applications due to its remarkable electronic and optical properties. This research is designed to tune the electronic and optical properties of V2O5 through modification in the energy band profile by varying Zn doping concentration. Density functional theory (DFT) calculations were used to investigate the Density of States (DOS) spectra for pure V2O5, exhibiting the prominent contribution of V-d and O-p orbitals, representing the p-d hybridized orbitals along with additional Zn-d orbital contribution in Zn-doped compositions. The effects of doping on the structural, morphological, elemental, and optical properties of the developed thin films were investigated employing X-ray diffraction (XRD), scanning electron microscope (SEM), x-ray dispersive spectroscopy (EDX), and spectroscopic ellipsometry (SE), respectively. X-ray diffraction analysis revealed the orthorhombic crystal structure in thin films. Surface morphology depicts the uniformly distributed compact rod-like features. The experimentally calculated band gap was found to decrease with Zn doping from 2.77 eV for pure V2O5 to 2.45 eV for maximum doping content. A significant variation is recorded in optical parameters like the increase in absorption coefficient and optical conductivity, which makes these more favorable for optoelectronic and photovoltaic applications.

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Electronic, Optical, and Epsilon Near-Zero Response in Magnetron-Sputtered Tantalum Oxynitride Thin Films

Cited by 4 publications

References 35 publications

DFT and experimental investigations on Pr substituted WO3 for electronic, thermoelectric and optical applications

DFT and experimental investigations on Pr substituted WO3 for electronic, thermoelectric and optical applications

A comparative study of DFT and experimental investigations for exploring the effect of Ti doping on the electronic, structural, and optical properties of Cu2O

Structural, electronic, and optical properties of Zn-doped V₂O₅ thin films

Contact Info

Product

Resources

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Electronic, Optical, and Epsilon Near-Zero Response in Magnetron-Sputtered Tantalum Oxynitride Thin Films

Cited by 4 publications

References 35 publications

DFT and experimental investigations on Pr substituted WO3 for electronic, thermoelectric and optical applications

DFT and experimental investigations on Pr substituted WO3 for electronic, thermoelectric and optical applications

A comparative study of DFT and experimental investigations for exploring the effect of Ti doping on the electronic, structural, and optical properties of Cu2O

Structural, electronic, and optical properties of Zn-doped V2O5 thin films

Contact Info

Product

Resources

About

Structural, electronic, and optical properties of Zn-doped V₂O₅ thin films