Electronic gap stability of two-dimensional tin monosulfide phases: Towards optimal structures for electronic device applications

N‐Doped Carbon‐Coated Mixed‐Phase SnS–SnS2 Anode with Carbon Nanofibers Skeleton for Improving Dual‐Ion Battery in Concentrated Electrolyte

“…23-0677), and the peaks present at 2θ ¼ 22°, 27.5°, 30.5°, 33.4°, and 39.1°belong to (110), ( 210), ( 011), (400), and (311) planes of SnS (JCPDS 39-0354), indicating that (SnS-SnS 2 )-NC-CF maintains the typical peaks of SnS 2 and SnS, corresponding to the reported literatures, which could confirm the existence of the mixed phase of SnS 2 and SnS (Figure 2a). [25][26][27][28] In addition, the peak located at 26.4°could be attributed to the (002) plane of graphite, caused by the CFs and N-doped carbon. Figure 2b shows the Raman spectrum of (SnS-SnS 2 )-NC-CF, and it can be clearly seen that several peaks emerge at 155, 310, 1342, 1560, and 2690 cm À1 , respectively.…”

Insights to the production of SnS-cubic thin films by vacuum thermal evaporation for photovoltaics

“…In 2022, the coexistence of SnS-ORT and SnS-CUB platelets was reported in the condensate formed by CVT at a temperature of 520 • C under an argon gas flow downstream from the SnS powder source at 550 • C [30]. From the results on scanning tunneling microscopy/spectroscopy (STM-S) on the SnS-CUB platelets, a bandgap of 1.7 eV was obtained, which was previously determined for the SnS-CUB thin films deposited at 17 • C [11,12] and also predicted from theoretical models [14,15].…”

“…A notable aspect seen among the results on SnS-CUB polymorph presented above is that it can be the 'preferred material' deposited at temperatures of 200 • C-520 • C under suitable conditions. The results in [29][30][31][32] showed that at a high deposition rate of 20-350 nm min −1 , SnS-ORT polymorph prevails in the material at substrate temperatures of 200 • C-550 • C. Unlike in vacuum deposition techniques (ALD, CVD, CVT, thermal evaporation or sputtering), in chemical deposition the source and substrate are at the same temperature. In a 2014 work on chemically deposited SnS thin films [33], it was found that at a deposition temperature of 20 • C where the rate of the film growth was 0.16 nm min −1 , the film deposited was notably compact with an E g close to 1.7 eV.…”

“…(i) These films would form at temperatures 375 • C [27] to 525 • C [30] if the growth rate (vapor flux on the growing film) remains below 5 nm min −1 , which is unusually low for typical vacuum-deposition of thin films. (ii) The preference for the growth of the SnS-CUB compared with SnS-ORT at a higher temperature under low vapor flux [27,30] is analogous to the preferred formation of SnS-RS in the epitaxial growth on NaCl (100) and (110) planes at 150 • C, whereas at 23 • C mixed phase of SnS-RS and SnS-ORT resulted [4].…”

“…(i) These films would form at temperatures 375 • C [27] to 525 • C [30] if the growth rate (vapor flux on the growing film) remains below 5 nm min −1 , which is unusually low for typical vacuum-deposition of thin films. (ii) The preference for the growth of the SnS-CUB compared with SnS-ORT at a higher temperature under low vapor flux [27,30] is analogous to the preferred formation of SnS-RS in the epitaxial growth on NaCl (100) and (110) planes at 150 • C, whereas at 23 • C mixed phase of SnS-RS and SnS-ORT resulted [4]. (iii) The coexistence of SnS-ORT and SnS-CUB observed in thin films produced by TE at substrate temperature of 275 • C, and the disappearance of the SnS-CUB phase at a higher temperature are caused by a relatively higher growth rate (10 nm min −1 ) [25], which is analogous to the absence of the SnS-CUB platelets in the material prepared by CVT [30] on the substrate at 550 • C subjected to a higher vapor flux.…”