2008
DOI: 10.1002/adma.200800659
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Electronic Current Transport through Molecular Monolayers: Comparison between Hg/Alkoxy and Alkyl Monolayer/Si(100) Junctions

Abstract: Electronic current transport through alkoxy and alkyl monolayer‐based junctions is presented. Monolayers are prepared on n‐Si(100) with sufficiently high quality to reliably investigate the actual molecular effect of each monolayer on their current–voltage characteristics. The results show that extending the Si‐binding chemistry from alkene to alcohol is feasible, which should significantly facilitate preparation of monolayers with modified molecules.

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Cited by 44 publications
(85 citation statements)
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“…Only at higher forward bias do the currents vary according to the thickness of the insulator, i.e., the molecular layer width here. Such length-independence of current at low forward bias was observed for several moderately-doped n-type MOMS junctions with n-Si [29,56,88,134,135,138,139] and n-GaAs, [35,36,140] contacted with medium-high work-function metals such as Hg.…”
Section: Semiconductor Versus Insulator-limited Transportmentioning
confidence: 53%
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“…Only at higher forward bias do the currents vary according to the thickness of the insulator, i.e., the molecular layer width here. Such length-independence of current at low forward bias was observed for several moderately-doped n-type MOMS junctions with n-Si [29,56,88,134,135,138,139] and n-GaAs, [35,36,140] contacted with medium-high work-function metals such as Hg.…”
Section: Semiconductor Versus Insulator-limited Transportmentioning
confidence: 53%
“…[33,43,83] Furthermore, the observed inversion [20] in n-SiÀalkyl/Hg (Fig. 3) and n-SiÀOÀalkyl/Hg junctions [88] (see Section 4.2) implies that the Si surface is not pinned, supporting the idea that CÀSi and CÀOÀSi surface terminations effectively passivate the Si surface both chemically (preventing oxidation) and electronically (small density of surface states). The analysis of interface states of complete junctions can be done with frequency-noise analysis [73] or forward bias capacitance.…”
Section: Passivation Of Surface Statesmentioning
confidence: 68%
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