2021
DOI: 10.1021/acsami.0c22108
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Electronic Control of Hot Electron Transport Using Modified Schottky Barriers in Metal–Semiconductor Nanodiodes

Abstract: Hot electron flux, generated by both incident light energy and the heat of the catalytic reaction, is a major element for energy conversion at the surface. Controlling hot electron flux in a reversible manner is extremely important for achieving high energy conversion efficiency. Here we demonstrate that hot electron flux can be controlled by tuning the Schottky barrier height. This phenomenon was monitored by using a Schottky nanodiode composed of a metal−semiconductor. The formation of a Schottky barrier at … Show more

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Cited by 19 publications
(15 citation statements)
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“…This indicates that the accumulation of positive charge by V O + at the metal–semiconductor interface via reverse, i.e., negative, bias and the increased trap-assisted tunneling results in an effective lowering of the Schottky barrier (Figure c), while the depletion of V O defects with forward bias reduces the tunneling probability and causes an effective increase in the Schottky barrier height (Figure b). This effect is consistent with similar reports correlating nanoscale metal–semiconductor Schottky barrier heights with defect densities. …”
Section: Results and Discussionsupporting
confidence: 92%
“…This indicates that the accumulation of positive charge by V O + at the metal–semiconductor interface via reverse, i.e., negative, bias and the increased trap-assisted tunneling results in an effective lowering of the Schottky barrier (Figure c), while the depletion of V O defects with forward bias reduces the tunneling probability and causes an effective increase in the Schottky barrier height (Figure b). This effect is consistent with similar reports correlating nanoscale metal–semiconductor Schottky barrier heights with defect densities. …”
Section: Results and Discussionsupporting
confidence: 92%
“…On the one hand, the Au NPs as plasmon can be used as energy-harvesting antennas to increase light absorption cross sections and effective optical path length of surrounding semiconductor materials due to the large scattering cross section and locally amplified electric field. , On the other hand, since the SPR absorption spectrum of Au NPs overlapped well with the absorption spectrum of 2D Yb-TCPP nanosheets, the PIRET can occur between Au NPs and 2D Yb-TCPP nanosheets, thereby improving the e–h formation rate and separation efficiency of 2D Yb-TCPP nanosheets (Figure ). Besides, the hot electrons induced by plasmon resonance of Au NPs can cross the Schottky barrier and transfer to the conduction band of 2D Yb-TCPP nanosheets, which also helps to improve the photoelectrochemical signal of Au NPs/Yb-TCPP composites. , …”
Section: Resultsmentioning
confidence: 99%
“…According to the pH change, the Schottky barrier height decreased by 0.03 eV, thereby increasing the chemicurrent signal five times. According to a previous report, the current signal increased three times when the Schottky barrier height decreased by 0.02 eV . Therefore, the degree of improvement of the current signal due to the decrease in the barrier height in the H 2 O 2 decomposition reaction can be quantitatively rationalized.…”
mentioning
confidence: 99%
“…In other words, in acidic solutions, the probability of electron transfer increases because the potential barrier is decreased. We recently reported on studies of controlling the Schottky barrier by applying an external bias and found that lowering the barrier by image force significantly increases the charge transfer. ,,,, Thus, in this study, more H + layers are formed on the Pt in the acidic solutions, resulting in a lower Schottky barrier. Compared to the gas phase, there are more ion layers in the liquid phase, decreasing the potential barrier and allowing for better hot electron transfer.…”
mentioning
confidence: 99%