Electronic Confinement and Coherence in Patterned Epitaxial Graphene

Abstract

Ultrathin epitaxial graphite was grown on single-crystal silicon carbide by vacuum graphitization. The material can be patterned using standard nanolithography methods. The transport properties, which are closely related to those of carbon nanotubes, are dominated by the single epitaxial graphene layer at the silicon carbide interface and reveal the Dirac nature of the charge carriers. Patterned structures show quantum confinement of electrons and phase coherence lengths beyond 1 micrometer at 4 kelvin, with mobilities exceeding 2.5 square meters per volt-second. All-graphene electronically coherent devices and device architectures are envisaged.

Structure of graphene and its disorders: a review

“…graphite exfoliation [6] and reduction of GO [305]) and bottom–up methods (e.g. epitaxial growth [306] and CVD [17,21]). Although mechanical exfoliation of HPOG by using Scotch tape allows the preparation of ultra-clean free-standing monolayer graphene, this method is extremely labor intensive and remains unfeasible for the production of large-area graphene sheets.…”

“…However, a large number of defects, including point defects, line defects and adsorption of functional groups, which are formed during the oxidation, vigorous exfoliation and reduction processes are introduced into these assembled graphene films. Epitaxial growth on silicon carbide [306–308] or ruthenium [309] at high-temperatures in ultrahigh vacuum can provide high-quality graphene with a size as large as that of the substrate [310]. However, the produced graphene strongly interacts with the substrate, hindering fabrication of electrically isolated monolayer graphene.…”

The Way towards Ultrafast Growth of Single‐Crystal Graphene on Copper

“…Graphene, a two‐dimensional material with carbon atoms bonded in a honeycomb lattice, has attracted immerse interests in the past decade due to its exceptional properties and various applications 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12. The growth of large‐area high‐quality graphene films is fundamental for the upcoming graphene applications.…”

High-yield production of graphene by liquid-phase exfoliation of graphite

“…Furthermore, it is difficult to see how to scale up this process to mass production. Alternatively, growth of graphene is also commonly achieved by annealing SiC substrates, but these samples are in fact composed of a multitude of domains, most of them sub-micrometer, and not spatially uniform in number, or in size over larger length scales 7 . A number of works have also reported graphene growth on metal substrates 8,9 , but this would require the sample transfer to insulating substrates in order to make useful devices, either via mechanical transfer or, via solution processing.…”