Electronic Conductivity, Seebeck Coefficient, and Defect Structure of La1-xSrxFeO3 (x=0.l, 0.25)

Abstract

Hardness of { lOT0) ZnO Surfaces Immersed in an Electrolyte," J . Appl. Phys., 49 121 614 ~1 7 (1978). "'J. S . Ahearn, J. I. Mills, and A . R. C. Westwood. "Effect of Electrolyte pH and Bias Voltage o n the Hardness of the (0001) ZnO Surface," J . Appl. Phys., 49 [I] Y6-102 (1978). 'IJ. S. Ahearn. J.

Use of the Rigid Band Formalism to Interpret the Relationship between O Chemical Potential and Electron Concentration inLa1−xSrxLankhorst1, Bouwmeester2, Verweij3 1996Phys. Rev. Lett.939560View full textAdd to dashboardCite

“…However, the first explanation is less likely since no decrease in e O 2 with increasing d has been ob- served in the related structures La 12x Sr x FeO 3 [18]. In these oxides, the values of the electric conduction [19] are much smaller than in La 12x Sr x CoO 3 [7], and hence screening of at least the coulombic part of vacancy interactions in the cobalt-containing oxides is expected to be more effective. The analysis of data for x 0.4 and 0.7, which compounds exhibit high vacancy concentration, showed that additional ionic contributions arise in both e O 2 and s O 2 .…”

Comparison of Electrochemical Properties of La0.6Sr0.4FeO3-δThin Film Electrodes: Oxidizing vs. Reducing Conditions

“…[20][21][22] Towards lower oxygen partial pressures (and/or higher temperatures) the equilibrium of Eq. 2 is shifted to the left hand side, increasing the amount of oxygen vacancies and thus the ionic conductivity.…”

“…19,20 Several studies were performed on the defect chemistry and transport properties of LSF [21][22][23][24][25][26][27][28][29][30][31] [2] Fe 4+ states can be interpreted as electron holes (h • ) and those determine the electronic conductivity at high oxygen partial pressure as they are the majority mobile charge carrier. [20][21][22] Towards lower oxygen partial pressures (and/or higher temperatures) the equilibrium of Eq. 2 is shifted to the left hand side, increasing the amount of oxygen vacancies and thus the ionic conductivity.…”

Control of conductivity and electric field induced strain in bulk Bi0.5K0.5TiO3–BiFeO3 ceramics

“…where [26][27][28] Thus, in the case of localized charge carriers, the electrical conduction can be realized through the polaron hopping mechanism. 16,17,27,28 Alternatively, in recent DFT studies 14,15,29 the possibility of band-like semiconductor behavior has been suggested for the same class of materials in which the case of delocalized charge carriers can also be feasible.…”