Abstract:Conventional negative electron affinity photocathodes require alternate activation of Cs/O, and the instability of Cs makes the cathode surface easily inactive. A Cs‐free GaN photocathode structure is reported, in which band engineering of the photocathode surface induced by Si doping eliminates the need to use Cs for photocathode activation. This heterojunction structure can obtain a low‐barrier surface without activation. GaN nanowires with n‐type capping layers are established using first principles, and th… Show more
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