Electronic-beam evaporation processed titanium oxide as an electron selective contact for silicon solar cells

Matkivskyi, Vladyslav; Lee, Youngseok; Seo, Hyeon Sik; Lee, Doh‐Kwon; Park, Jong‐Keuk; Kim, Inho

doi:10.1016/j.cap.2021.10.005

Cited by 8 publications

(6 citation statements)

References 39 publications

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“…We can see that the annealed samples of both precursors display a higher oxygen-to-titanium ratio and a higher minority carrier lifetime than the as-deposited samples. This phenomenon was also observed in previous work for the E-beam evaporated TiO x layer [42], indicating that a higher oxygen content improves the passivation properties of the TiO x layer. As the initial ellipsometry measurements showed small thickness deviations for the TDMA-Ti-deposited TiOx films, these measurements were not continued for the bulk of samples.…”

Section: Tem Analysis Of Deposited Filmssupporting

confidence: 87%

“…Previous studies have presented opposite effects on passivation quality with the crystallisation of TiO x [ 46 ]. However, a previous study by the current first author on E-beam-deposited TiO x indicated the same passivation improvement with film crystallisation [ 42 ].…”

Section: Resultsmentioning

confidence: 75%

“…During the TiO x phase change process, additional oxygen might be absorbed, which will decrease oxygen deficiency in the film. Another possible reason for the improvement in the measured MCLT after the PDA process is the additional growth of the silicon oxide (SiO 2 ) at the Si/TiO x interface [ 42 , 46 ]. Previous studies have presented opposite effects on passivation quality with the crystallisation of TiO x [ 46 ].…”

Section: Resultsmentioning

confidence: 99%

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Atomic Layer Deposition of Titanium Oxide-Based Films for Semiconductor Applications—Effects of Precursor and Operating Conditions

et al. 2023

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Two widely used atomic layer deposition precursors, Tetrakis (dimethylamido) titanium (TDMA-Ti) and titanium tetrachloride (TiCl4), were investigated for use in the deposition of TiOx-based thin films as a passivating contact material for solar cells. This study revealed that both precursors are suited to similar deposition temperatures (150 °C). Post-deposition annealing plays a major role in optimising the titanium oxide (TiOx) film passivation properties, improving minority carrier lifetime (τeff) by more than 200 µs. Aluminium oxide deposited together with titanium oxide (AlOy/TiOx) reduced the sheet resistance by 40% compared with pure TiOx. It was also revealed that the passivation quality of the (AlOy/TiOx) stack depends on the precursor and ratio of AlOy to TiOx deposition cycles.

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Section: Tem Analysis Of Deposited Filmssupporting

confidence: 87%

Section: Resultsmentioning

confidence: 75%

Section: Resultsmentioning

confidence: 99%

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Atomic Layer Deposition of Titanium Oxide-Based Films for Semiconductor Applications—Effects of Precursor and Operating Conditions

et al. 2023

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“…TiO 2 thin films can be deposited by different techniques such as chemical vapor deposition (CVD), atomic layer deposition (ALD), dip coating, spin coating, spray pyrolysis, e-beam evaporation, and magnetron sputtering [ 23 , 24 , 25 , 26 ]. Among them, the method that reports the best results in the aforementioned application is ALD [ 24 , 27 ].…”

Section: Introductionmentioning

confidence: 99%

“…Such ETL implementation into the heterostructures offers a path towards photovoltaic technologies that use relatively simple and near-room fabrication techniques. TiO 2 thin films can be deposited by different techniques such as chemical vapor deposition (CVD), atomic layer deposition (ALD), dip coating, spin coating, spray pyrolysis, e-beam evaporation, and magnetron sputtering [23][24][25][26]. Among them, the method that reports the best results in the aforementioned application is ALD [24,27].…”

Section: Introductionmentioning

confidence: 99%

Sputtered Ultrathin TiO2 as Electron Transport Layer in Silicon Heterojunction Solar Cell Technology

2022

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This work presents the implementation of ultrathin TiO2 films, deposited at room temperature by radio-frequency magnetron sputtering, as electron-selective contacts in silicon heterojunction solar cells. The effect of the working pressure on the properties of the TiO2 layers and its subsequent impact on the main parameters of the device are studied. The material characterization revealed an amorphous structure regardless of the working pressure; a rougher surface; and a blue shift in bandgap in the TiO2 layer deposited at the highest-pressure value of 0.89 Pa. When incorporated as part of the passivated full-area electron contact in silicon heterojunction solar cell, the chemical passivation provided by the intrinsic a-Si:H rapidly deteriorates upon the sputtering of the ultra-thin TiO2 films, although a short anneal is shown to restore much of the passivation lost. The deposition pressure and film thicknesses proved to be critical for the efficiency of the devices. The film thicknesses below 2 nm are necessary to reach open-circuit values above 660 mV, regardless of the deposition pressure. More so, the fill-factor showed a strong dependence on deposition pressure, with the best values obtained for the highest deposition pressure, which we correlated to the porosity of the films. Overall, these results show the potential to fabricate silicon solar cells with a simple implementation of electron-selective TiO2 contact deposited by magnetron sputtering. These results show the potential to fabricate silicon solar cells with a simple implementation of electron-selective TiO2 contact.

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Characterization of the Interfacial Defect Layer in Chalcopyrite Solar Cells by Depth‐Resolved Muon Spin Spectroscopy

Alberto

Vilão

Ribeiro

et al. 2022

Adv Materials Inter

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As devices become smaller and more complex, the interfaces between adjacent materials become increasingly important and are often critical to device performance. An important research goal is to improve the interface between the absorber and the window layer by inserting buffer layers to adjust the transition. Depth‐resolved studies are key for a fundamental understanding of the interface. In the present experiment, the interface between the chalcopyrite Cu(In,Ga)Se2 absorber and various buffer layers are investigated using low‐energy muon spin rotation (μSR) spectroscopy. Depth resolution in the nm range is achieved by implanting the muons with different energies so that they stop at different depths in the sample. Near the interface, a region about 50 nm wide is detected where the lattice is more distorted than further inside the absorber. The distortion is attributed to the long‐range strain field caused by defects. These measurements allow a quantification of the corresponding passivation effect of the buffer layer. Bath‐deposited cadmium sulfide provides the best defect passivation in the near interface region, in contrast to the dry‐deposited oxides, which have a much smaller effect. The experiment demonstrates the great potential of low energy μSR spectroscopy for microscopic interfacial studies of multilayer systems.

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Electronic-beam evaporation processed titanium oxide as an electron selective contact for silicon solar cells

Cited by 8 publications

References 39 publications

Atomic Layer Deposition of Titanium Oxide-Based Films for Semiconductor Applications—Effects of Precursor and Operating Conditions

Atomic Layer Deposition of Titanium Oxide-Based Films for Semiconductor Applications—Effects of Precursor and Operating Conditions

Sputtered Ultrathin TiO2 as Electron Transport Layer in Silicon Heterojunction Solar Cell Technology

Characterization of the Interfacial Defect Layer in Chalcopyrite Solar Cells by Depth‐Resolved Muon Spin Spectroscopy

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