Electronic Band Structure of Group IV 2D Materials: Graphene, Silicene, Germanene, Stanene using Tight Binding Approach

Two-Dimensional GeC2 with Tunable Electronic and Carrier Transport Properties and a High Current ON/OFF Ratio

“…Over the past decade, considerable progress has been made in the research and development of 2D semiconductor materials, including group IVA or VA elemental materials, transition metal dichalcogenides (TMDs), − transition metal carbides and nitrides (MXenes), − and group III–V or IV–V compound materials. − Many of these 2D materials possess excellent electrical and optical properties, rendering them high prospects for various applications in nanoelectronics, optoelectronics, and thermoelectrics, although improved properties are still highly demanded. For example, silicene and germanene lack sufficient band gaps (<0.1 eV) to achieve high current switching as transistors. − MoS 2 has a desirable band gap, but its low mobility limits its application in certain devices. , Phosphorene possess both a desirable band gap and high anisotropic carrier mobility, but its susceptibility to oxidation in air is a major limitation for device applications. − Hence, continued efforts are still needed to explore new 2D semiconductor materials with suitable band gaps, high carrier mobilities, and high chemical stabilities as well as to improve the electronic properties of existing 2D semiconductor materials by strain engineering, − doping, , introducing defects, making van der Waals heterojunctions, , and multilayer stacking. − , …”