Electronic band structure of compressively strained Ge1−xSnx with x &amp;lt; 0.11 studied by contactless electroreflectance

Żelazna, K.; Polak, Maciej P.; Scharoch, P.; Serafińczuk, J.; Gładysiewicz, M.; Misiewicz, J.; Dekoster, J; Kudrawiec, R.

doi:10.1063/1.4917236

Cited by 37 publications

(36 citation statements)

References 27 publications

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“…The mobility values of carriers of the “light” holes band should be essentially higher than those of carriers of the “heavy” holes band, and hence, upon this transfer the hole partial contribution to the electrical conduction should be significantly enhanced. In a line with this conjecture, two recent studies on “compressively strained” by Sn-doping germanium81 and strained films of pure germanium82 clearly documented the above proposed splitting of the “heavy” and “light” holes bands.…”

Section: Discussionmentioning

confidence: 62%

Dramatic Changes in Thermoelectric Power of Germanium under Pressure: Printing n–p Junctions by Applied Stress

Korobeinikov

Morozova

Shchennikov

et al. 2017

Sci Rep

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Controlled tuning the electrical, optical, magnetic, mechanical and other characteristics of the leading semiconducting materials is one of the primary technological challenges. Here, we demonstrate that the electronic transport properties of conventional single-crystalline wafers of germanium may be dramatically tuned by application of moderate pressures. We investigated the thermoelectric power (Seebeck coefficient) of p– and n–type germanium under high pressure to 20 GPa. We established that an applied pressure of several GPa drastically shifts the electrical conduction to p–type. The p–type conduction is conserved across the semiconductor-metal phase transition at near 10 GPa. Upon pressure releasing, germanium transformed to a metastable st12 phase (Ge-III) with n–type semiconducting conductivity. We proposed that the unusual electronic properties of germanium in the original cubic-diamond-structured phase could result from a splitting of the “heavy” and “light” holes bands, and a related charge transfer between them. We suggested new innovative applications of germanium, e.g., in technologies of printing of n–p and n–p–n junctions by applied stress. Thus, our work has uncovered a new face of germanium as a ‘smart’ material.

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Section: Discussionmentioning

confidence: 62%

Dramatic Changes in Thermoelectric Power of Germanium under Pressure: Printing n–p Junctions by Applied Stress

Korobeinikov

Morozova

Shchennikov

et al. 2017

Sci Rep

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“…Moreover, recent investigations have made possible to achieve strained GeSn with large α-Sn content [35,36]. Figure 4 shows Poisson equation could be done [20] but this is not done in the present work.…”

Section: Absorption Spectrum: Modeling and Resultsmentioning

confidence: 83%

Stark shift of the absorption spectra in Ge/Ge1−Sn /Ge type-I single QW cell for mid-wavelength infra-red modulators

Yahyaoui

Sfina

Lazzari

et al. 2015

Superlattices and Microstructures

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For mid-wavelength infra-red (MWIR) modulation or detection applications, we propose α-Sn rich Ge/Ge 1-x Sn x /Ge a type-I single quantum wells (SQW) partially strain compensated on Ge 1-y Sn y relaxed layers grown onto (001)-oriented Ge substrate. Such elementary cells with W-like potential profiles of conduction and valence bands have been modeled by solving the one-dimensional Schrödinger equation under an applied external electrical field. First, strain effects on electrons, heavy holes (hh) and light holes (lh) energy bands for strained/relaxed Ge 1-x Sn x /Ge 1-y Sn y heterointerfaces are investigated using the modelsolid theory in the whole ranges (0  x, y  1) of Sn compositions. From the obtained band-discontinuities, band gaps and effective masses, Ge 1-y Sn y /Ge/Ge 0.80 Sn 0.20 /Ge/Ge 1-y Sn y cells are computed as a function of the Ge 0.80 Sn 0.20 well width for three compositions of the Ge 1-y Sn y buffer layer (y=0.05, 0.07 and 0.09) in order to get the optimum quantum confinement of electrons and holes levels while keeping a reasonable amount of averaged strain in the cell. The electric field effect on the absorption spectra is given. An absorption coefficient in the 6  to 3  10 3 cm −1 range is reasonably obtained for a SQW at room temperature with a rather large Stark shift of the direct transition between 0.46 and 0.38 eV (i.e., λ=3.26-2.70 μm) at large external fields (50 kV/cm). These characteristics are attractive for the design of MWIR optical modulators.

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“…In his work Aspnes omits the terms corresponding to 1/E 2 ; however, in the case of large broadening it can play a significant role and hence we included it in the model. A simplified TDLS model is often used [48][49][50], but it is valid only in the case of low and uniform electrical perturbation of the crystal material [51,52]. Low perturbation can be estimated from the experiment as the case of R/R 10 −4 [47].…”

Section: Experimental Methodsmentioning

confidence: 99%

Direct and indirect band gaps in Ge under biaxial tensile strain investigated by photoluminescence and photoreflectance studies

et al. 2018

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Electronic band structure of compressively strained Ge1−xSnx with x < 0.11 studied by contactless electroreflectance

Cited by 37 publications

References 27 publications

Dramatic Changes in Thermoelectric Power of Germanium under Pressure: Printing n–p Junctions by Applied Stress

Dramatic Changes in Thermoelectric Power of Germanium under Pressure: Printing n–p Junctions by Applied Stress

Stark shift of the absorption spectra in Ge/Ge1−Sn /Ge type-I single QW cell for mid-wavelength infra-red modulators

Direct and indirect band gaps in Ge under biaxial tensile strain investigated by photoluminescence and photoreflectance studies

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