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Wu, Xiaowei; Kycia, S.; Olson, C. G.; Benning, P. J.; Goldman, A. I.; Lynch, David W.

doi:10.1103/physrevlett.75.4540

Cited by 74 publications

(51 citation statements)

References 21 publications

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“…The value of the crystallization temperature T K was determined by intersection of the two lines, one before and another one during the crystallization process. We obtain a T K of ≈ 410 K, which is relatively high in comparison to amorphous metallic systems 38,43 but is in the same range of amorphous-like materials such as AlCuFe 26,44 and AlPdMn 45,46 , where a pseudogap at the Fermi energy was observed by means of angular-resolved photoemission studies 46 and tunneling spectroscopy 44 .…”

Section: Resultsmentioning

confidence: 96%

Topological insulator thin films starting from the amorphous phase-Bi2Se3 as example

Barzola‐Quiquia

Lehmann²,

Stiller³

et al. 2015

Journal of Applied Physics

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We present a new method to obtain topological insulator Bi2Se3 thin films with a centimeter large lateral length. To produce amorphous Bi2Se3 thin films we have used a sequential flash-evaporation method at room temperature. Transmission electron microscopy has been used to verify that the prepared samples are in a pure amorphous state. During annealing the samples transform into the rhombohedral Bi2Se3 crystalline strcuture which was confirmed using X-ray diffraction and Raman spectroscopy. Resistance measurements of the amorphous films show the expected Mott variable range hopping conduction process with a high specific resistance compared to the one obtained in the crystalline phase (metallic behavior). We have measured the magnetoresistance (MR) and the Hall effect (HE) at different temperatures between 2 K and 275 K. At temperatures T 50 K and fields B 1 T we observe weak anti-localization in the MR; the Hall measurements confirm the n-type character of the samples. All experimental results of our films are in quantitative agreement with results from samples prepared using more sophisticated methods.

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Section: Resultsmentioning

confidence: 96%

Topological insulator thin films starting from the amorphous phase-Bi2Se3 as example

Barzola‐Quiquia

Lehmann²,

Stiller³

et al. 2015

Journal of Applied Physics

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“…For a detailed understanding of the electronic structure, photoelectron spectroscopy has developed into an extremely useful tool 5,6 , and thus has also been applied to quasicrystalline materials in recent years; an overview of work performed until 1998 is given by Stadnik (see reference 4 and references therein). Issues addressed in recent studies have been the evidence for the existence of a pseudogap [7][8][9] , the assignment of features in the valence level spectrum to the different constituent atoms 10 from cross-section considerations and resonant photoemission, and the evidence for dispersing states in the valence level spectrum 11,12 . Attention has also been paid to the variations in relative intensities in the valence level region, and the intensities and line shapes of core level emission 13,14 .…”

Section: Introductionmentioning

confidence: 99%

Core and valence level photoemission and photoabsorption study of icosahedral Al–Pd–Mn quasicrystals

Horn¹,

Theis²,

Paggel³

et al. 2005

J. Phys.: Condens. Matter

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The electronic structure of quasicrystalline Al-Pd-Mn is investigated by means of valence and core level photoelectron spectroscopy. Variations of the photoionization cross section in the constituents' valence electronic levels as a function of photon energy are used to identify contributions from the different atomic species, in particular near the Pd 4d Cooper minimum.Resonant photoemission at the Mn 2p absorption edge shows the contribution of the Mn 3d states to the density of states in a region near the Fermi level. The asymmetry of Pd 3d and Mn 2p core level photoemission lines, and its difference for emission from metallic and quasicrystalline phases is utilized to infer the contributions of the different constituents to the density of states at the Fermi level.

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“…11,12 For the same type of quasicrystal, however, Wu et al observed a distinct pseudogap feature, with a density of states ͑DOS͒ decreasing as a power law near E F . 13 In this latter case, the quasicrystalline ordering of the surface could be checked by observing the low-energy electrondiffraction ͑LEED͒ pattern. While the differences between the two sets of results were attributed to differences in sample temperature, 11,12 significant differences in preparation history also existed.…”

Section: Introductionmentioning

confidence: 99%

Electronic structure of quasicrystalline surfaces: Effects of surface preparation and bulk structure

et al. 2000

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We elucidate the nature of the surface electronic properties of quasicrystalline Al-Pd-Mn. We do this by using photoelectron and Auger electron spectroscopies, and by making a variety of comparisons-across types of bulk samples, and across methods of surface preparation. The main conclusions are these: (i) The narrow Mn 2p 3/2 core-level line observed in the icosahedral phase is a fingerprint of a suppression in the density of states (a pseudogap) at the Fermi level and is not unique to the quasicrystalline phase. It is also independent of the symmetry of the quasicrystalline surface. The Auger line shape is also affected and may be used as a fingerprint of a pseudogap. (ii) A similarly narrow Fe 2p 3/2 core-level line characterizes the icosahedral Al-Cu-Fe quasicrystal, consistent with the expectation that the electronic structure is of general importance in the stabilization of icosahedral phases. (iii) In icosahedral Al-Pd-Mn, the pseudogap of the bulk is not retained up to the surface immediately after fracture, but can be restored by annealing, or by sputter annealing to sufficiently high temperatures. Assuming that the pseudogap reflects an electronic stabilization of the atomic structure, these results suggest that the heat-treated surfaces are more stable than the surface obtained by fracturing at room temperature. We elucidate the nature of the surface electronic properties of quasicrystalline Al-Pd-Mn. We do this by using photoelectron and Auger electron spectroscopies, and by making a variety of comparisons-across types of bulk samples, and across methods of surface preparation. The main conclusions are these: ͑i͒ The narrow Mn 2p 3/2 core-level line observed in the icosahedral phase is a fingerprint of a suppression in the density of states ͑a pseudogap͒ at the Fermi level and is not unique to the quasicrystalline phase. It is also independent of the symmetry of the quasicrystalline surface. The Auger line shape is also affected and may be used as a fingerprint of a pseudogap. ͑ii͒ A similarly narrow Fe 2p 3/2 core-level line characterizes the icosahedral Al-Cu-Fe quasicrystal, consistent with the expectation that the electronic structure is of general importance in the stabilization of icosahedral phases. ͑iii͒ In icosahedral Al-Pd-Mn, the pseudogap of the bulk is not retained up to the surface immediately after fracture, but can be restored by annealing, or by sputter annealing to sufficiently high temperatures. Assuming that the pseudogap reflects an electronic stabilization of the atomic structure, these results suggest that the heat-treated surfaces are more stable than the surface obtained by fracturing at room temperature.

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Electronic Band Dispersion and Pseudogap in Quasicrystals: Angular-Resolved Photoemission Studies on IcosahedralAl70Pd

Cited by 74 publications

References 21 publications

Topological insulator thin films starting from the amorphous phase-Bi2Se3 as example

Topological insulator thin films starting from the amorphous phase-Bi2Se3 as example

Core and valence level photoemission and photoabsorption study of icosahedral Al–Pd–Mn quasicrystals

Electronic structure of quasicrystalline surfaces: Effects of surface preparation and bulk structure

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