2018
DOI: 10.1039/c7tc05331b
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Electronic and transport properties of Li-doped NiO epitaxial thin films

Abstract: NiO is a p-type wide bandgap semiconductor of use in various electronic devices ranging from solar cells to transparent transistors. This work reports the controlling of conductivity and increase of work functions by Li doping.

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Cited by 139 publications
(156 citation statements)
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“…It is known that the electrocatalytic activities of catalysts are strongly related to their microstructures and ECSA. Hence, researchers have paid more and more attention to the construction of Ni/Fe-based Ni nanotube arrays [25] and Ni x Fe y -O nanocatalysts [26] compared to pure Ni/Fe-based mixed-metal oxides recently. For example, based on the dealloying inheritance effect and eutectic reaction, novel Ni-Fe-O based composite with a unique mesoporous nanowire network structure ( Figure 2D) is designed and synthesized by Zhang and co-workers.…”
Section: Ni/fe-based Mixed-metal Oxidesmentioning
confidence: 99%
“…It is known that the electrocatalytic activities of catalysts are strongly related to their microstructures and ECSA. Hence, researchers have paid more and more attention to the construction of Ni/Fe-based Ni nanotube arrays [25] and Ni x Fe y -O nanocatalysts [26] compared to pure Ni/Fe-based mixed-metal oxides recently. For example, based on the dealloying inheritance effect and eutectic reaction, novel Ni-Fe-O based composite with a unique mesoporous nanowire network structure ( Figure 2D) is designed and synthesized by Zhang and co-workers.…”
Section: Ni/fe-based Mixed-metal Oxidesmentioning
confidence: 99%
“…1,10,11 Additionally, NiO can be used as a hole transport and electron blocking layer in organic solar cells. 12 NiO films have already been grown by many methods, including sputtering, [13][14][15] metal evaporation with oxygen or nitrogen dioxide inlet, 16 pulsed laser deposition (PLD), 3,17 sol-gel coating, 18 or plasma-assisted molecular beam epitaxy (PA-MBE). 19 As an alloy together with MgO it is also interesting for deep-ultraviolet photodetectors, offering a band gap tuning between 3.6 and 7.8 eV.…”
Section: Introductionmentioning
confidence: 99%
“…21 The common rock-salt crystal structure with similar lattice constants of MgO (0.4212 nm) and NiO (0.4176 nm) and low lattice mismatch < 1 % makes MgO a widely-used, suitable substrate to epitaxially grow high quality NiO layers. 3,19 In addition, MgO was found to be a good electron blocking layer for GaN/NiO based diodes. 22 Detailed investigations about the epitaxial growth of NiO at different growth conditions, however, are very rare: Warot 19 In this study we investigate the PA-MBE growth and properties of NiO thin films on different MgO orientations and under a wider range of growth conditions with the goal of realizing high quality single crystalline layers.…”
Section: Introductionmentioning
confidence: 99%
“…The spectra are recorded during NiO growth using the MLO process. The spectra of the thickest layer shows the typical features of NiO with a main emission line near 854 eV and a characteristic satellite emission at 1.5–2 eV higher binding energies . Identical spectra are obtained for magnetron‐sputtered films.…”
Section: Resultsmentioning
confidence: 62%