Abstract:Gallium nitride is one of the III-V semiconductors the most promising in many application areas. Indeed, because of its large direct bandgap (3,4 eV), it can be dedicated to both optoelectronic applications as transistors achieve hyper frequency. It allows the manufacture of components stable at high temperatures and high frequencies. In this work we are interested in the nitriding of gallium arsenide substrates of n-type in order to obtain a thin layer of GaN. The samples were chemically cleaned immediately i… Show more
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