Electronic and optical properties of GIZO thin film grown on SiO₂/Si substrates

Abstract

The electronic and optical properties of GaInZnO (GIZO) thin films grown on SiO 2 /Si by r.f. magnetron sputtering were obtained by means of XPS and reflection electron energy loss spectroscopy (REELS). The optical properties represented by the dielectric function ε, refractive index n, extinction coefficient k and transmission coefficient T of GIZO thin films were obtained from a quantitative analysis of the REELS spectra. When the concentration ratios of Ga : In : Zn in GIZO thin films are 1 : 1 : 1, 2 : 2 : 1, 3 : 2 : 1 and 4 : 2 : 1, the bandgap values are 3.2, 3.2, 3.4 and 3.6 eV, respectively. The optical properties were determined from the energy loss of the REELS spectra by using quantitative analysis of electron energy loss spectra (QUEELS)-ε(k, ω)-REELS software. The optical properties depend on the Ga concentration, and the transmission in the visible region improved with increasing Ga concentration in GIZO.

Stopping Powers and Inelastic Mean Free Path of 100 eV to 30 keV Electrons in Zirconium Silicates

“…al. [13,16,18,[20][21][22][23][24][25] have employed the semi-classical dielectric response model proposed by Tougaard and Yubero [26][27][28][29] in their calculation of ELF. The algorithms of this method have been implemented in the generally available QUEELS-(k,)-REELS software package [29].…”

“…The algorithms of this method have been implemented in the generally available QUEELS-(k,)-REELS software package [29]. The validity and consistency of this method was extensively tested recently [21] and it has also previously been successfully used to obtain the ELFs and optical properties of ultrathin dielectric [15,16,18] semiconductor [17], polymer [22], metals [14,23], and transparent oxide films [20,21,24,25]. In Ref.…”

“…[15] have been compared with experimental optical data and the method was validitated. Further, the method was successfully employed to obtain the ELFs of ultrathin dielectrics, semiconductors, polymers, metals, and transparent oxide films [14][15][16][17][18][19][20][21][22][23][24][25]. Figure 1 shows the ELFs of (ZrO 2 ) x (SiO 2 ) 1-x (x=1, 0.75, 0.5, 0.25, 0) from Refs.…”

“…REELS is surface sensitive and the spectra carries information on the electronic structure of the material because the energy loss experienced by the incident electron depends on the electronic structure of the material. The spectra can easily be recorded over a wide energy-loss range [13][14][15][16][17][18][19][20][21][22][23][24][25][26][27][28][29]. The calculation of the ELFs of zirconium oxide, silicon dioxide, and zirconium silicates from REELS spectra has already been performed by Tahir et.…”

Diffusion Behaviors and Electrical Properties in the In-Ga-Zn-O Thin Film Deposited by Radio-frequency Reactive Magnetron Sputtering

“…Especially, the transparency of IGZO thin films is enhanced considerably through a post-annealing. The electrical properties with respect to the crystal structure of IGZO thin films and oxygen vacancies in IGZO thin films have been studied [17][18][19] . Generally, IGZO thin films are deposited at a low temperature and then post-annealed temperature.…”