Electronic and magnetic properties of 3d transition metal doped MoSe2 monolayer

Tian, Yi; Zhu, Zhipeng; Ge, Zhizhong; Sun, An; Zhang, Quan; Huang, Songlei; Li, Hongping; Meng, Jian

doi:10.1016/j.physe.2019.113745

Cited by 34 publications

(17 citation statements)

References 25 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…Actually, the magnetic moments in induced magnetic materials are not isolated from each other to form a long-range coupling effect. Especially, there are changes in charge, defects, and spin states with dopants in the host material. − The bound magnetic polaron (BMP) mechanism may be expected to explain the observed ferromagnetism after transition-metal doping in MoSe 2 considering the low dopant content and low carrier concentration in our samples. We infer some more distant Fe dopants are located within the polaron radius to interact with defects besides the Fe spin polarization. − It is worth noting that the origin of the observed ferromagnetism in the doped TMD systems has been controversial to date.…”

Section: Resultsmentioning

confidence: 92%

Synthesis of Group VIII Magnetic Transition-Metal-Doped Monolayer MoSe₂

et al. 2022

View full text Add to dashboard Cite

The limitation on the spintronic applications of van der Waals layered transition-metal dichalcogenide semiconductors is ascribed to the intrinsic nonmagnetic feature. Recent studies have proved that substitutional doping is an effective route to alter the magnetic properties of two-dimensional transition-metal dichalcogenides (TMDs). However, highly valid and repeatable substitutional doping of TMDs remains to be developed. Herein, we report group VIII magnetic transition metal-doped molybdenum diselenide (MoSe2) single crystals via a one-pot mixed-salt-intermediated chemical vapor deposition method with high controllability and reproducibility. The high-angle annular dark-field scanning transmission electron microscopy studies further confirm that the sites of Fe are indeed substitutionally incorporated into the MoSe2 monolayer. The Fe-doped MoSe2 monolayer with a concentration from 0.93% to 6.10% could be obtained by controlling the ratios of FeCl3/Na2MoO4. Moreover, this strategy can be extended to create Co(Ni)-doped MoSe2 monolayers. The magnetic hysteresis (M–H) measurements demonstrate that group VIII magnetic transition-metal-doped MoSe2 samples exhibit room-temperature ferromagnetism. Additionally, the Fe-doped MoSe2 field effect transistor shows n-type semiconductor characteristics, indicating the obtainment of a room-temperature dilute magnetic semiconductor. Our approach is universal in magnetic transition-metal substitutional doping of TMDs, and it inspires further research interest in the study of related spintronic and magnetoelectric applications.

show abstract

Section: Resultsmentioning

confidence: 92%

Synthesis of Group VIII Magnetic Transition-Metal-Doped Monolayer MoSe₂

et al. 2022

View full text Add to dashboard Cite

show abstract

“…As it was predictable, the screened hybrid functional, HSE06, modified the band gap amount of the monolayer but it increases the cost of calculations. In many 2D materials studies, such as TM-doped in MoSe 2 33 , HfS 2 26 , 34 and ZrS 2 20 monolayers, DFT calculations with GGA functional had been used and acceptable results had obtained, so we have reported the results calculated by GGA method for TM-doped monolayers. The spin–orbit coupling (SOC) has a considerable effect on the electronic structures such as band gap in semiconductor TMDs monolayers 35 , 36 .…”

Section: Resultsmentioning

confidence: 99%

Band structure engineering of NiS2 monolayer by transition metal doping

Khalatbari

Vishkayi

Oskouian

et al. 2021

Sci Rep

View full text Add to dashboard Cite

By using density functional theory calculations, we have studied the effects of V-, Cr-, Mn-, Fe- and Co-doped on the electronic and magnetic properties of the 1T-NiS2 monolayer. The results show that pure 1T-NiS2 monolayer is a non-magnetic semiconductor. Whereas depending on the species of transition metal atom, the substituted 1T-NiS2 monolayer can become a magnetic semiconductor (Mn-doped), half-metal (V- and Fe-doped) and magnetic (Cr-doped) or non-magnetic (Co-doped) metal. The results indicate that the magnetism can be controlled by the doping of 3d transition metal atoms on the monolayer. In this paper, the engineering of the electric and magnetic properties of 1T-NiS2 monolayer is revealed. It is clear that it could have a promising application in new nanoelectronic and spintronic devices.

show abstract

“…Other 2H-TMDs monolayer, including VS 2 [12,14], VTe 2 [12,15], MX 2 (M = Nb, Ta; X = Se, Te) [15], and MCl 2 (M = Fe, Co, and Ni) [16], also exhibit intrinsic FM order. On the contrary, pristine and undoped 2H-MX 2 (M = Mo, W; X = S, Se) [17][18][19][20] monolayers are nonmagnetic materials due to their utterly symmetric density of states for the spin-up and spin-down channels, limiting their potential applications in spintronics. Although the VSe 2 monolayer also has 1T phase (octahedral coordination), it is metallic and has higher formation energy than 2H phase (trigonal prismatic coordination) [21,22], which is not explored in this work.…”

Section: Graphical Abstract Introductionmentioning

confidence: 99%

Magnetic and phonon transport properties of two-dimensional room-temperature ferromagnet VSe2

et al. 2021

View full text Add to dashboard Cite

The room-temperature intrinsic ferromagnetism of monolayer VSe 2 with a van der Waals gap provides an exciting opportunity for both the fundamental studies and future low-dimensional spintronic devices. By applying biaxial strain, the tunable electronic, magnetic, and phonon transport properties of the VSe 2 monolayer are systematically investigated via first-principle calculations. With in-plane easy magnetization axis, the VSe 2 monolayer is always a robust room-temperature ferromagnetic semiconductor in the strain range from -2 to 4%. According to the second-order perturbation theory of spin-orbital coupling, magnetic anisotropy energy is mainly contributed by the interaction between Vd xy orbital and V-d x 2 Ày 2 orbital. The Curie temperature increases significantly with increasing biaxial strain, from 303 to 469 K. In the meantime, room-temperature lattice thermal conductivity is only 0.682 Wm -1 K -1 and exhibits strong strain dependence. The weakened anharmonic three-phonon scattering rate due to the tradeoff between the number and the strength of scattering channel largely compensates for the influence of the reduced phonon group velocity, causing a monotonous increase in the lattice thermal conductivity with the strain changing. Moreover, the lattice thermal conductivity can be reduced further by limiting the size of monolayer under tensile strain, due to the enhanced size dependence of the thermal conductivity.

show abstract

Electronic and magnetic properties of 3d transition metal doped MoSe2 monolayer

Cited by 34 publications

References 25 publications

Synthesis of Group VIII Magnetic Transition-Metal-Doped Monolayer MoSe₂

Synthesis of Group VIII Magnetic Transition-Metal-Doped Monolayer MoSe₂

Band structure engineering of NiS2 monolayer by transition metal doping

Magnetic and phonon transport properties of two-dimensional room-temperature ferromagnet VSe2

Contact Info

Product

Resources

About

Electronic and magnetic properties of 3d transition metal doped MoSe2 monolayer

Cited by 34 publications

References 25 publications

Synthesis of Group VIII Magnetic Transition-Metal-Doped Monolayer MoSe2

Synthesis of Group VIII Magnetic Transition-Metal-Doped Monolayer MoSe2

Band structure engineering of NiS2 monolayer by transition metal doping

Magnetic and phonon transport properties of two-dimensional room-temperature ferromagnet VSe2

Contact Info

Product

Resources

About

Synthesis of Group VIII Magnetic Transition-Metal-Doped Monolayer MoSe₂

Synthesis of Group VIII Magnetic Transition-Metal-Doped Monolayer MoSe₂