Electronic and magnetic properties of FeSe thin film prepared on GaAs (001) substrate by metal-organic chemical vapor deposition

Abstract

FeSe film was prepared on GaAs (001) substrate by low pressure metal-organic chemical vapor deposition. The x-ray diffraction measurement indicated that the sample was preferentially oriented with tetragonal structure. The structure relationship between FeSe epilayer and GaAs (001) substrate has been studied. The critical behavior in the temperature-dependent resistivity at ∼290K is close to the Curie temperature, which confirmed that the transformation from ferromagnetism to paramagnetism could be responsible for the critical behavior.

Magnetic anomaly in superconducting FeSe

“…Previous experimental measurements indicate magnetic behavior in tetragonal FeSe, with Curie temperature around 325 K, but the magnetism is attributed to Fe clusters and Fe vacancies in Fe rich and Se rich compounds, respectively [22,23]. More recent calculations on tetragonal selenium deficient FeSe x compound show that magnetism is located around Se vacancies [24].…”

Stable monolayer α-phase of CdTe: strain-dependent properties

“…For instance, α-FeSe thin films, belong to P4/nmm space group as α-CdTe, can grow on (001) surface of GaAs substrates by using low-pressure metal organic vapor deposition technique. 60 More recently, it is observed that single-layer α-FeSe films can grow on SrTiO 3…”

Magnetism driven by anion vacancies in superconductingα-FeSe1−x

“…The PbO-type α-FeSe 1−x compound is the one of current interest and has been studied extensively for its spintronics-related magnetic properties by Shen and coworkers, [7,8,9,10] who concluded from observed hysteresis a ferromagnetic (FM) state in the nonstoichiometric phase, but a nonmagnetic state in the stoichiometric phase. Very recently, Hsu et al reported superconductivity with T c = 8 K, at x = 0.12 and 0.18.…”