1976
DOI: 10.1088/0022-3719/9/5/016
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Electronic and magnetic properties of the pyrite-structure compound NiS2: influence of vacancies and copper impurities

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Cited by 72 publications
(60 citation statements)
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“…The data set for NiS2 was collected at the reduced accelerating voltage of 45 kV in order to avoid contributions of a/2 radiation which would mainly contaminate the intensities of reflections with mixed indices; this would lead to biased results and in particular to a biased site-occupancy parameter for S. This aspect is more important for NiS2 since, in contrast to COS2, a range of nonstoichiometric compositions is known. The lattice parameter is a measure of the nickel vacancy concentration (Krill et al, 1976) and special care was therefore taken to determine its value precisely. For this purpose, the 20 angles of 40 reflections in the range 44 < 20 < 82 ° were measured on both sides of the primary beam.…”
Section: Methodsmentioning
confidence: 99%
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“…The data set for NiS2 was collected at the reduced accelerating voltage of 45 kV in order to avoid contributions of a/2 radiation which would mainly contaminate the intensities of reflections with mixed indices; this would lead to biased results and in particular to a biased site-occupancy parameter for S. This aspect is more important for NiS2 since, in contrast to COS2, a range of nonstoichiometric compositions is known. The lattice parameter is a measure of the nickel vacancy concentration (Krill et al, 1976) and special care was therefore taken to determine its value precisely. For this purpose, the 20 angles of 40 reflections in the range 44 < 20 < 82 ° were measured on both sides of the primary beam.…”
Section: Methodsmentioning
confidence: 99%
“…The least-squares refinement using the resulting 20 values led to a lattice parameter of 5.6852 ~, (Table 1) which corresponds to the composition NISI.97. According to Krill et al (1976), NiSx in the range 1-91 ___ x---2.1 has a nearly constant S-vacancy concentration of about 4% , the variation in x being due to Ni vacancies. The Ni-vacancy concentration of the particular crystal used in our experiments is therefore about 2.7%.…”
Section: Methodsmentioning
confidence: 99%
“…[14] In addition, nickel sulfides can form various phases, [15] such as NiS, Ni 3 + x S 2 , Ni 3 S 2 , Ni 7 S 6 , Ni 3 S 4 , and NiS 2 , and have multiple applications, including as photocatalysts for H 2 evolution, [16] possible transformation toughener, [17] cathode materials for rechargeable lithium batteries, [18] or as a highboiling solvent for all-solid-state lithium secondary batteries. [19] Furthermore, Du's group introduced the application of iron/ nickel sulfide filled carbon nanotubes and their microwave-absorbing properties, [20] with a maximum reflection loss of À29.58 dB.…”
Section: Introductionmentioning
confidence: 99%
“…In the Mott-Hubbard compound NiS 2−x Se x electron hoppings between the sites of Ni occur through the chalcogenide sites (this is caused by peculiarities of the pyrite crystal structure [33]), the substitution of S 2− ion for Se 2− ion in NiS 2 leads to an increase of wave functions overlap, consequently the probability of an electron hopping increases which is equivalent to a band broadening or to an external pressure increasing. Therefore, the pressure-temperature phase diagram constructed for NiS 2 can describe the experimental composition-temperature phase diagram [26,27] of the compound NiS 2−x Se x .…”
Section: Pressure-temperature Phase Diagram Of the Modelmentioning
confidence: 99%