Electronic and atomic structure of undoped and doped ta-C films

The origin of conductivity in ion-irradiated diamond-like carbon – Phase transformation and atomic ordering

“…Nitrogen, phosphorous as well as boron doping was reported elsewhere [26][27][28][29]. Considering the ion species used in this work, only the group-III-element Ga and the group-V-element Bi could act as dopants.…”

Modeling of ta-C growth: Influence of the technological parameters

“…beyond the maximum is rather slight, but the slope s(ε = const., T) with rising temperature is rather steep [6,[10][11][12][13]. In contrary for pulsed laser deposition (PLD) or vacuum arc with broad energy distributions and higher rates, there is a much stronger decline after the energy maximum and a more gradual temperature dependence.…”

60 years of DLC coatings: Historical highlights and technical review of cathodic arc processes to synthesize various DLC types, and their evolution for industrial applications

“…-hardness reaches values up to 80 GPa [147,156], -Poisson ratio is reported to be within 0.12 [157] and 0.202 [158], -optical band gap can be high as 3.6 eV [159,160], -films are p-type semiconductors [161], -electrical resistivity ranges up to 10 -8 … 10 -10 Ohm-cm at room temperature [92], -thermal conductivity up to 10 W/mK [162,163], -thermal stability of hardness and elastic modulus up to at least 850 °C in vacuum [164], -thermal stability of the sp 3 fraction between -190°C as a lower limit [165] and 1100 °C as an upper limit under vacuum [166], -Start of oxidation in air ca. 450 °C [167].…”