Electronic analog of the electro-optic modulator

Datta, Supriyo; Das, Biswajit

doi:10.1063/1.102730

Cited by 4,643 publications

(3,722 citation statements)

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“…These experiments have revealed oscillatory behavior of the TMR as a function of the external gate voltage. Similar oscillations were predicted as a consequence of the gate-voltage-tunable Rashba spin-orbit (SO) interaction [11,12] in a classic paper by Datta and Das some time ago [13]. Since Datta-Das oscillations have still not been observed experimentally so far, a thorough theoretical investigation of this effect in nanotubes is called for and provided here.…”

Section: Introductionsupporting

confidence: 53%

“…[14]. In the original Datta-Das proposal [13], subband mixing was ignored so that different channels just add up coherently, but subband mixing has later been argued to spoil the effect [15,16]. In CNTs, the special band structure requires a careful re-examination of the Datta-Das idea in this context, and we shall show that the arguments of Refs.…”

Section: Introductionmentioning

confidence: 78%

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Rashba spin–orbit coupling and spin precession in carbon nanotubes

Martino

Egger²

2005

J. Phys.: Condens. Matter

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This is the unspecified version of the paper.This version of the publication may differ from the final published version. Abstract. The Rashba spin-orbit coupling in carbon nanotubes and its effect on spin-dependent transport properties are analyzed theoretically. We focus on clean non-interacting nanotubes with tunable number of subbands N . The peculiar band structure is shown to allow in principle for Datta-Das oscillatory behavior in the tunneling magnetoresistance as a function of gate voltage, despite the presence of multiple bands. We discuss the conditions for observing Datta-Das oscillations in carbon nanotubes. Permanent

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Section: Introductionsupporting

confidence: 53%

Section: Introductionmentioning

confidence: 78%

Rashba spin–orbit coupling and spin precession in carbon nanotubes

Martino

Egger²

2005

J. Phys.: Condens. Matter

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“…The most basic unit in such a concept is the spin analog to the transistor, in which the manipulation of pure spin currents is crucial. The original proposal by Datta and Das [3], which is also applicable to pure spin currents [4], suggested a spin manipulation that would arise from the spin precession due to the spin-orbit interaction modulated by an electric field (Rashba coupling). However, a fundamental limitation appears here, because the best materials for spin transport are those showing the lowest spin-orbit interaction and, therefore, there has been no success in electrically manipulating the spins and propagating them at the same environment, with few exceptions [4].…”

mentioning

confidence: 99%

“…Equation (3) shows that two quantities renormalize the spin-diffusion length: the spinmixing conductance by means of the real term 2ρG r λ 2 /t, and the imaginary Hanle term i(λ/λ m ) 2 originating from the applied field. While the former leads to a reduction of λ due to the torque exerted by the NM/FMI interface to the spins [30,32], the latter causes, in addition, the precession of the spins when the s and H are noncollinear [40].…”

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confidence: 99%

Modulation of pure spin currents with a ferromagnetic insulator

et al. 2015

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We propose and demonstrate spin manipulation by magnetically controlled modulation of pure spin currents in cobalt/copper lateral spin valves, fabricated on top of the magnetic insulator Y 3 Fe 5 O 12 (YIG). The direction of the YIG magnetization can be controlled by a small magnetic field. We observe a clear modulation of the nonlocal resistance as a function of the orientation of the YIG magnetization with respect to the polarization of the spin current. Such a modulation can only be explained by assuming a finite spin-mixing conductance at the Cu/YIG interface, as it follows from the solution of the spin-diffusion equation Spintronics is a rapidly growing field that aims at using and manipulating not only the charge, but also the spin of the electron, which could lead to faster data processing, nonvolatility, and lower electrical power consumption as compared to conventional electronics [1]. Sophisticated applications such as hard-disk read heads and magnetic random access memory (MRAM) have been introduced in the last two decades.Further progress could be achieved with pure spin currents, which are an essential ingredient in an envisioned spin-only circuit that would integrate logics and memory [2]. The most basic unit in such a concept is the spin analog to the transistor, in which the manipulation of pure spin currents is crucial. The original proposal by Datta and Das [3], which is also applicable to pure spin currents [4], suggested a spin manipulation that would arise from the spin precession due to the spin-orbit interaction modulated by an electric field (Rashba coupling). However, a fundamental limitation appears here, because the best materials for spin transport are those showing the lowest spin-orbit interaction and, therefore, there has been no success in electrically manipulating the spins and propagating them at the same environment, with few exceptions [4].Alternative ways to control pure spin currents are thus desirable. One could take advantage of the spin-mixing conductance concept [5,6] at nonmagnetic metal (NM)/ferromagnetic insulator (FMI) interfaces, which governs the interaction between the spin currents present at the NM and the magnetization of the FMI. This concept is the basis of new spindependent phenomena, including spin pumping [6][7][8][9][10][11][12], spin Seebeck effect [6,13], and spin Hall magnetoresistance (SMR) [6,[14][15][16][17][18]. In these cases, a NM with large spin-orbit coupling is required to convert the involved spin currents into charge currents via the inverse spin Hall effect [19].In this Rapid Communication, we demonstrate an alternative way of modulating pure spin currents based on a magnetic, instead of electric, gating. To that end, we use lateral spin valves (LSVs). These devices allow an electrical injection and detection of pure spin currents in a NM channel by using * f.casanova@nanogune.eu ferromagnetic (FM) electrodes in a nonlocal configuration [20][21][22][23][24][25][26][27][28][29]. The LSVs have been fabricated on top of a FMI, in order to enab...

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“…[2][3][4][5][6][7] Spin-polarized field-effect transistor (spin-FET) proposed by Datta and Das in 1990, [8] as a seminal spintronic device, has become an intriguing field of research with the potential for the solution to the influence of the quantum effect under the trend towards miniaturization in electronics. It has drawn extensive attention for the realization of spin-FET features in several material systems and device configurations.…”

mentioning

confidence: 99%