Electron-tunneling studies of the hexaboride materials<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">SmB</mml:mi></mml:mrow><mml:mrow><mml:mn>6</mml:mn></mml:mrow></mml:msub></mml:mrow><mml:mo>,</mml:mo></mml:math><mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">EuB</mml:mi></mml:mrow><mml:mrow><mml:mn>6</mml:mn></mml:mrow></mml:msub></mml

Amsler, B.; Fisk, Z.; Sarrao, J. L.; Molnár, S. von; Meisel, M. W.; Sharifi, F.

doi:10.1103/physrevb.57.8747

Cited by 33 publications

(27 citation statements)

References 27 publications

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“…The overlap of the spin up bands at 0K is 0.5eV and the gap between valence and conduction band at T C is 0.04eV. The band gap at T C is in accordance with tunnel experiments 6 . With a mean-field treatment of the Hamiltonian one could also show the halfmetal to semiconductor transition.…”

Section: Resultssupporting

confidence: 68%

“…A possible refinement of our calculation will be to consider a real band structure for EuB 6 . Above T C up to 30K is a regime of phase separation where bound magnetic polarons and percolation effects play a significant role.…”

Section: Discussionmentioning

confidence: 99%

“…4,5 Concomitant with the bulk magnetic phase transition at T C is a transition from semimetal to semiconductor. 6,7 For low temperatures the semimetallic behavior is proven theoretically and experimentally. Early local density approximation (LDA) 8 as well as recent band structure calculations in LDA+U 9 show an overlap of valence and conduction band around the X-point of the Brillouin zone.…”

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confidence: 99%

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Electronic properties ofEuB6in the ferromagnetic regime: Half-metal versus semiconductor

Kreissl

Nolting

2005

Phys. Rev. B

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To understand the halfmetallic ferromagnet EuB6 we use the Kondo lattice model for valence and conduction band. By means of a recently developed many-body theory we calculate the electronic properties in the ferromagnetic regime up to the Curie temperature. The decreasing magnetic order induces a transition from halfmetallic to semiconducting behavior along with a band broadening. We show the temperature dependence of the quasiparticle density of states and the quasiparticle dispersion as well as the effective mass, the number of carriers and the plasma frequency which are in good agreement with the experimental data.

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Section: Resultssupporting

confidence: 68%

Section: Discussionmentioning

confidence: 99%

mentioning

confidence: 99%

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Electronic properties ofEuB6in the ferromagnetic regime: Half-metal versus semiconductor

Kreissl

Nolting

2005

Phys. Rev. B

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“…Such behavior is consistent with Brinkman-Rowell-Dynes model of the tunneling between two different metals [3]. Upon cooling a dip typical of VFSs is formed in the vicinity of the Fermi energy, E F , and data strongly resemble observations of other authors [4]. In a qualitative agreement with studies of transport and thermal properties [2], the DOS at E F remains finite down to 4.2 K. The shape of the dip strongly resembles a narrow pseudogap.…”

Section: Methodssupporting

confidence: 77%

Tunneling Spectroscopy Studies of SmB₆and YbB₁2

et al. 2008

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Reported electron tunneling studies of SmB 6 and YbB 12 in the temperature region with a strongly temperature activated transport reveal a qualitative change of tunneling regime upon cooling. While the differential conductance curves above 50 K resemble the tunneling between two different metals, the spectra observed at 4.2 K are typical of the tunneling between a metal and a (narrow-gap) valence fluctuating semiconductor.

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“…The success of plasma oxidation of the SmB 6 crystal as a means to form a tunnel barrier has to do with the sta- 47 and was attempted on SmB 6 with some success 63 . In our case, the emergent topological surface states in SmB 6 and their robustness against nonmagnetic perturbations 22 are very beneficial.…”

Section: Discussionmentioning

confidence: 99%

Planar tunneling spectroscopy of the topological Kondo insulator SmB6

et al. 2017

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Several technical issues and challenges are identified and investigated for the planar tunneling spectroscopy of the topological Kondo insulator SmB6. Contrasting behaviors of the tunnel junctions prepared in two different ways are analyzed and explained in detail. The conventional approach based on an AlOx tunnel barrier results in unsatisfactory results due to the inter-diffusion between SmB6 and deposited Al. On the contrary, plasma oxidation of SmB6 crystals produces high-quality tunnel barriers on both (001) and (011) surfaces. Resultant conductance spectra are highly reproducible with clear signatures for the predicted surface Dirac fermions and the bulk hybridization gap as well. The surface states are identified to reside on two or one distinguishable Dirac cone(s) on the (001) and (011) surface, respectively, in good agreement with the recent literature. However, their topological protection is found to be limited within the low energy region due to their inevitable interaction with the bulk excitations, called spin excitons, consistent with a recent theoretical prediction. Implications of our findings on other physical properties in SmB6 and also other correlated topological materials are remarked.

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Electron-tunneling studies of the hexaboride materialsSmB6,EuB6

Cited by 33 publications

References 27 publications

Electronic properties ofEuB6in the ferromagnetic regime: Half-metal versus semiconductor

Electronic properties ofEuB6in the ferromagnetic regime: Half-metal versus semiconductor

Tunneling Spectroscopy Studies of SmB₆and YbB₁2

Planar tunneling spectroscopy of the topological Kondo insulator SmB6

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Electron-tunneling studies of the hexaboride materialsSmB6,EuB6

Cited by 33 publications

References 27 publications

Electronic properties ofEuB6in the ferromagnetic regime: Half-metal versus semiconductor

Electronic properties ofEuB6in the ferromagnetic regime: Half-metal versus semiconductor

Tunneling Spectroscopy Studies of SmB6and YbB12

Planar tunneling spectroscopy of the topological Kondo insulator SmB6

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Product

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Tunneling Spectroscopy Studies of SmB₆and YbB₁2