Electron tunneling dynamics between two-dimensional and zero-dimensional quantum systems: Contributions of momentum matching, higher subbands, and phonon-assisted processes

Korsch, Alexander R.; Ebler, C.; Nguyen, Giang N.; Scholz, Sven; Wieck, Andreas D.; Ludwig, Arne

doi:10.1103/physrevb.102.035413

Cited by 1 publication

(1 citation statement)

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“…Thus, the single X-shape dI/dV peaks in Figure 1b originates from the resonant tunneling through a single defect located in the middle of the h-BN layer, which is strongly enhanced by perfectly aligning the lattice orientation of the two graphene layers. We note that such defects in the h-BN can produce momentum-dependent tunneling 36,37 that can strengthen the tunneling rate and generate the specific X-shape dI/dV peaks.…”

Section: Resultsmentioning

confidence: 87%

Robust Quantum Oscillation of Dirac Fermions in a Single-Defect Resonant Transistor

et al. 2021

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The massless nature of Dirac Fermions produces large energy gaps between Landau levels (LLs), which is promising for topological devices. While the energy gap between the zeroth and first LLs reaches 36 meV in a magnetic field of 1 T in graphene, exploiting the quantum Hall effect at room temperature requires large magnetic fields (∼30 T) to overcome the energy level broadening induced by charge inhomogeneities in the device. Here, we report a way to use the robust quantum oscillations of Dirac Fermions in a single-defect resonant transistor, which is based on local tunneling through a thin (∼1.4 nm) hexagonal boron nitride (h-BN) between lattice-orientation-aligned graphene layers. A single point defect in the h-BN, selected by the orientation-tuned graphene layers, probes local LLs in its proximity, minimizing the energy broadening of the LLs by charge inhomogeneity at a moderate magnetic field and ambient conditions. Thus, the resonant tunneling between lattice-orientation-aligned graphene layers highlights the potential to spectroscopically locate the atomic defects in the h-BN, which contributes to the study on electrically tunable single photon source via defect states in h-BN.

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Section: Resultsmentioning

confidence: 87%